Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

Toshiba Corporation has launched a 100V low-ON-resistance, low-leakage power MOSFET using trench MOS process as the latest addition to its line-up for automotive applications. The new product, "TK55S10N1", achieves low ON-resistance with a combination of a chip in the "U-MOS VIII-H series" fabricated with the 8th generation trench MOS process and a "DPAK+" package that utilizes copper connectors.

Rated for 55A, the device is primarily suited for automotive applications, especially those that demand high-speed switching, such as switching regulators. It features a typical on-resistance of 5.5mΩ with a VGS=10V. Samples are available now with mass production scheduled to start in April 2013.