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Discrete and Bare Die IGBTs for Hybrid and All-Electric Vehicles

Discrete and Bare Die IGBTs for Hybrid and All-Electric Vehicles

Fairchild expanding its growing portfolio of automotive-grade semiconductor solutions for hybrid electric vehicles (HEV), plug-in hybrid electric…


High-Reliability SCALE2 Driver Technology to 1200 V Applications

High-Reliability SCALE2 Driver Technology to 1200 V Applications

Power Integrations announced a family of galvanically isolated single-channel gate driver ICs ranging in output current from 2.5 A to 8 A


1200V SiC MOSFET in SOT227 MiniBLOC

1200V SiC MOSFET in SOT227 MiniBLOC

SiC-based Power Module includes BJTs and Drivers

SiC-based Power Module includes BJTs and Drivers

Fast GaN FET Driver Unveiled Utilizing UltraCMOS Technology

Fast GaN FET Driver Unveiled Utilizing UltraCMOS Technology

Peregrine Semiconductor Corp. introduces the word’s fastest GaN FET driver, the UltraCMOS® PE29100


80V Half-Bridge 33MHz GaN FET Driver

80V Half-Bridge 33MHz GaN FET Driver

Secondary-Side MOSFET Driver for 5V to 12V Conversion

Secondary-Side MOSFET Driver for 5V to 12V Conversion

30V / 1.5A Photorelays for Semiconductor Testers

30V / 1.5A Photorelays for Semiconductor Testers

1700V SiC MOSFET Optimized for Industrial Converters

1700V SiC MOSFET Optimized for Industrial Converters

2.38 mOhm Dual MOSFET for Battery Protection

2.38 mOhm Dual MOSFET for Battery Protection

25A / 650V Hermetic SiC FETs handle 225 Degrees C

25A / 650V Hermetic SiC FETs handle 225 Degrees C

12mm2 60V N-channel Power MOSFET with Low On-Resistance

12mm2 60V N-channel Power MOSFET with Low On-Resistance

Texas Instruments introduces a new 60-V N-channel FemtoFET power transistor that provides the industry’s lowest resistance


1.2-mm² 60-V 54mΩ N-channel MOSFET

1.2-mm² 60-V 54mΩ N-channel MOSFET

Delivering first SiC Intelligent Power Modules to Thales

Delivering first SiC Intelligent Power Modules to Thales

This article discusses the announcement of the delivery of the CISSOID's first prototype of 3-phase 1200V/100A SiC MOSFET IPMs to Thales…


new products Jun 16, 2016 by CISSOID
Laminated Busbar Enabling High Frequency High Voltage and High Temperature Electronics

Laminated Busbar Enabling High Frequency High Voltage and High Temperature Electronics

Mersen presented its unique solution to get the best of the 2 worlds: high T° (up to 200°C) and low inductance laminated busbar for power module…


new products Jun 13, 2016 by Mersen
GaN Device claims Highest Efficiency at Highest Frequency

GaN Device claims Highest Efficiency at Highest Frequency

SP1026 Series 30kV TVS Diode Arrays Help Prevent Equipment Damage from Electrostatic Discharges

SP1026 Series 30kV TVS Diode Arrays Help Prevent Equipment Damage from Electrostatic Discharges

Littelfuse, Inc. has introduced the SP1026 Series 15pF 30kV Bidirectional Discrete TVS Diode Array


new products Jun 02, 2016 by Littelfuse
1.7kV IGBT Modules rated for 75A to 600A

1.7kV IGBT Modules rated for 75A to 600A

GaN RF Power Transistors for Cellular Base Stations

GaN RF Power Transistors for Cellular Base Stations

300W Plastic-packaged GaN Power Transistor

300W Plastic-packaged GaN Power Transistor