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SiC Power Devices Aim to Accelerate Automotive Electrification

SiC Power Devices Aim to Accelerate Automotive Electrification

5A Gate Drive Optocouplers for IGBTs and SiC/GaN MOSFETs

5A Gate Drive Optocouplers for IGBTs and SiC/GaN MOSFETs

First GaN Power ICs Leave Silicon Behind

First GaN Power ICs Leave Silicon Behind

Navitas Semiconductor announced the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ monolithically-integrated 650V…


Minister Visit to Danfoss Silicon Power

Minister Visit to Danfoss Silicon Power

Schleswig-Holstein's Minister for Economic Affairs, Labour, Transport and Technology, Reinhard Meyer, visited Danfoss Silicon Power March 4th


Protect Control Sense Market Application Solutions Featured at PCIM Europe 2016

Protect Control Sense Market Application Solutions Featured at PCIM Europe 2016

Littelfuse, Inc. will be attending one of the world’s leading events, the PCIM Europe 2016 in Nuremberg from May 10-12, 2016


new products May 11, 2016 by Littelfuse
SiC Schottkys have 50% Higher Current Density and Improved Surge Ratings

SiC Schottkys have 50% Higher Current Density and Improved Surge Ratings

All-SiC Half-Bridge Power Module & Gate Driver Combination

All-SiC Half-Bridge Power Module & Gate Driver Combination

Industry’s First Web-Based Circuit Simulator Dedicated to Evaluating Silicon Carbide Devices

Industry’s First Web-Based Circuit Simulator Dedicated to Evaluating Silicon Carbide Devices

This article introduces Wolfspeed, a Cree Company's free and powerful online circuit-simulation tool for power designs, the SpeedFit…


new products May 06, 2016 by Wolfspeed
Littelfuse to unveil new SiC Products at PCIM

Littelfuse to unveil new SiC Products at PCIM

1200V SiC MOSFET with 45-milliOhm On-Resistance

1200V SiC MOSFET with 45-milliOhm On-Resistance

28V 30W GaN HEMT Die now Available

28V 30W GaN HEMT Die now Available

IGBT Enhances Energy Efficiency in Inverters

IGBT Enhances Energy Efficiency in Inverters

DC-DC Converters can Drive SiC MOSFETs

DC-DC Converters can Drive SiC MOSFETs

600-V GaN FET Power Stage

600-V GaN FET Power Stage

Thermal Management Materials for SiC and GaN Devices

Thermal Management Materials for SiC and GaN Devices

MPAC-Doherty devices Support GaN PA Frequencies

MPAC-Doherty devices Support GaN PA Frequencies

USCi and Elettromeccanica ECC SpAto sign Distribution Agreement

USCi and Elettromeccanica ECC SpAto sign Distribution Agreement

United Silicon Carbide Inc. (USCi) a leading manufacturer for SiC devices located in Monmouth Junction, New Jersey announces a distribution…


Innovation Award 2016 and the Young Engineer Award

Innovation Award 2016 and the Young Engineer Award

The jury has decided to give the SEMIKRON Innovation Award 2016 to a researcher team from Erlangen for its innovation on 'Zero Tolerance -…


new products Apr 17, 2016 by SEMIKRON
IX2120B Drives Both High Side and Low Side IGBTs or MOSFETs

IX2120B Drives Both High Side and Low Side IGBTs or MOSFETs

IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation (NASDAQ: IXYS), announced the immediate availability…


new products Apr 17, 2016 by IXYS
Opto-Isolated IGBT Gate Pre-Driver IC for In-Vehicle Inverters

Opto-Isolated IGBT Gate Pre-Driver IC for In-Vehicle Inverters