1.2-mm² 60-V 54mΩ N-channel MOSFET

Texas Instruments (TI) today introduced a new 60-V N-channel FemtoFET power transistor that claims the industry's lowest resistance that is 90 percent below traditional 60-V load switches, reducing power loss in end-systems. The CSD18541F5 is offered in a 1.53-mm-by-0.77-mm silicon-based package that has an 80 percent smaller footprint than load switches in SOT-23 packages.

The CSD18541F5 metal-oxide semiconductor field-effect transistor (MOSFET) maintains a typical on-resistance (Rdson) of 54-mΩ and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications.

The tiny land grid array (LGA) package features a 0.5-mm pitch between pads for easy mounting. The CSD18541F5 expands TI's NexFETâ„¢ technology portfolio of FemtoFET MOSFETs to include higher voltages and manufacturing-friendly footprints.

CSD18541F5 key features and benefits include: 54-mΩ of Rdson at 10-V gate-to-source (V(GS)) is 90 percent less than traditional 60-V load switches, providing lower power loss. 1.53-mm-by-0.77-mm-by-0.35-mm LGA package is 80 percent smaller than a traditional load switch in a SOT-23 package, reducing printed circuit board (PCB) board space. Manufacturing-friendly 0.5-mm pad pitch. Integrated electrostatic discharge (ESD) protection diode safeguards the MOSFET gate from over voltage.

Available in volume now from TI and its authorized distributors, the CSD18541F5 is packaged in a 3-pin LGA package and priced at US$0.14 in 1,000-unit quantities.