This article highlights Richardson RFPD GS-065-0xx-1-L devices which is the new Family of 650 V GaN E-HEMTs ideal for low power applications.
This article highlights Richardson RFPD GS-065-0xx-1-L devices which is the new Family of 650 V GaN E-HEMTs ideal for low power applications.
OTTAWA, Ontario, Canada, April 24, 2019 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors,…
OTTAWA, Ontario, Canada, April 24, 2019 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced that its CEO
This article discuss the Alpha and Omega Semiconductor AONV070V65G1 Gallium Nitride (GaN) 650V transistor, a product in…
This article discuss the Alpha and Omega Semiconductor AONV070V65G1 Gallium Nitride (GaN) 650V transistor, a product in the new αGAN™ Technology…
Anaheim, Calif., Applied Power Electronics Conference & Exposition (APEC) March 19, 2019 – GaN Systems, the global…
Anaheim, Calif., Applied Power Electronics Conference & Exposition (APEC) March 19, 2019 – GaN Systems, the global leader in GaN (gallium…
GaN Systems announces a strategic partnership with Aveox to significantly reduce the size and weight of their 3-phase AC…
GaN Systems announces a strategic partnership with Aveox to significantly reduce the size and weight of their 3-phase AC power converters with APFC.
Silanna Semiconductor recently unveiled the world’s first fully integrated active clamp flyback (ACF) controller for…
Silanna Semiconductor recently unveiled the world’s first fully integrated active clamp flyback (ACF) controller for designing high-power-density…
This article features ON Semiconductor Strata Developer Studio™ development platform that facilitates the rapid and…
This article features ON Semiconductor Strata Developer Studio™ development platform that facilitates the rapid and easy evaluation of solutions.