Half-Bridge Evaluation Board from GaN Systems and ON Semiconductor Demonstrates Next Performance Leap in GaN.
Half-Bridge Evaluation Board from GaN Systems and ON Semiconductor Demonstrates Next Performance Leap in GaN.
Dialog Semiconductor Launches Configurable, High-Frequency Sub-PMICs Powering Latest Mobile Processors.
Dialog Semiconductor Launches Configurable, High-Frequency Sub-PMICs Powering Latest Mobile Processors.
GaN Systems to Showcase Significant GaN Advancements at Leading Power Electronics Event in China.
GaN Systems to Showcase Significant GaN Advancements at Leading Power Electronics Event in China.
Search For The Next’s technology uses quantum tunnel mechanics enabling complex ICs to be made competitively in existing…
Search For The Next’s technology uses quantum tunnel mechanics enabling complex ICs to be made competitively in existing…
This article features STMicroelectronics STHV64SW 64-channel high-voltage analog-switch IC with unprecedented integration…
This article features STMicroelectronics STHV64SW 64-channel high-voltage analog-switch IC with unprecedented integration for advanced ultrasound…
This article highlights Alpha and Omega Semiconductor AOZ8621UNI Transient Voltage Suppressor (TVS) for VBUS protection…
This article highlights Alpha and Omega Semiconductor AOZ8621UNI Transient Voltage Suppressor (TVS) for VBUS protection with high-surge TVS…
Partners with Anker Innovations to drive GaN revolution in mass-market AC-DC power adapters SAN JOSE, Calif.-- Power…
Partners with Anker Innovations to drive GaN revolution in mass-market AC-DC power adapters SAN JOSE, Calif.-- Power Integrations, the leader in…
X-FAB Silicon Foundries SE announced that it is broadening the scope of its cooperation with the EUROPRACTICE Consortium…
X-FAB Silicon Foundries SE announced that it is broadening the scope of its cooperation with the EUROPRACTICE Consortium which counts high-profile…
This features Efficient Power Conversion Corporation (EPC) publication of the third edition of “GaN Transistors for…
This features Efficient Power Conversion Corporation (EPC) publication of the third edition of “GaN Transistors for Efficient Power…
This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high…
This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high current density GaN devices.
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