Transphorms 150 m and 240 m 650 V GaN FETs
This artilcle highlights Transphorm 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET that are high-voltage and high current density GaN devices.
From fast-charging consumer adapters to ultra-slim DVRs, today’s advanced designs require advanced power conversion technology:
Transphorm’s 150 mΩ and 240 mΩ 650 V GaN FETs
These high-voltage and high current density GaN devices enable efficient low-wattage power supplies for a broad range of applications.
- Universal adapters
- USB Type-C PD/PPS adapters
- Gaming consoles
- Set-top boxes
- Mobile devices
- Laptops
Transphorm’s GaN FETs are being deployed by customers seeking to innovate in ways not possible with Silicon MOSFETs. More power output via cooler conversion in smaller form factors.
Our 150 mΩ TP65H150LSG FET and 240 mΩ TP65H300G4LSG FET are built on Transphorm’s Gen III and Gen IV platforms. As a result, they offer a ± 20 V gate robustness and a 2.1 V - 4 V noise immunity threshold in PQFN 8x8 packages. For engineers developing lower wattage solutions, these devices ultimately provide the ability to deliver increased power density in common circuit topologies with:
- Reliability: Our FETs are the industry’s first JEDEC-qualified GaN power transistors and offer less than 2.0 FIT based on more than 5 billion field hours.
- Designability: Minimal external gate drive circuitry, standard device packages, and well-known thermal management techniques allow for simplified system development.
- Drivability: We pair our GaN HEMT with a normally-off, low-voltage Silicon MOSFET, which is driven by off-the-shelf drivers.
- Reproducibility: Our manufacturing process offers Silicon CMOS yields to satisfy increasing customer demands.
About Transphorm
Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
Transphorm is dedicated to educating and supporting customers developing with high voltage GaN.
