EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also…
NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also count the number of…
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build…
Researchers from the University of Arkansas receive a $17.87 million grant from the National Science Foundation to build and run a fabrication…
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting;…
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting; Hysteretic control…
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.
Chip giant Infineon is planning a significant boost to its investments in factory expansions over the next year.
The increase of competitiveness, robustness and efficiency of future railway converters has demanded new power…
The increase of competitiveness, robustness and efficiency of future railway converters has demanded new power semiconductor modules. Converter…
North Carolina-based power device manufacturer Cree is refreshing its brand identity and signing a new supply deal with GM.
North Carolina-based power device manufacturer Cree is refreshing its brand identity and signing a new supply deal with GM.
Engineers created a new battery technology that combines the benefits of solid-state electrolyte and an all-silicon anode.
Engineers created a new battery technology that combines the benefits of solid-state electrolyte and an all-silicon anode.
The unit offers a 300mA battery charger, three independent power rails, and a separate LDO output.
The unit offers a 300mA battery charger, three independent power rails, and a separate LDO output.
This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with…
This article proposes a method to obtain optimal properties of silicon fast IGBT chips designed for joint operation with SiC SBD in hybrid modules.…
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
New device completes Microchip’s family of Vref products providing increased reliability and AEC-Q100 qualification.
New device completes Microchip’s family of Vref products providing increased reliability and AEC-Q100 qualification.
Researchers develop microbatteries that are as thick as three sheets of paper, and can be embedded into sensor circuitry.
Researchers develop microbatteries that are as thick as three sheets of paper, and can be embedded into sensor circuitry.
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
X-FAB Semiconductor Foundries announces completion of a licensing agreement with X-Celeprint and becomes world’s first…
X-FAB Semiconductor Foundries announces completion of a licensing agreement with X-Celeprint and becomes world’s first foundry to offer…
The new package enables EM/IR assessment of analog, digital, and mixed-signal IC designs of any size before committing to silicon.
The new package enables EM/IR assessment of analog, digital, and mixed-signal IC designs of any size before committing to silicon.
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