The two companies recently held an opening ceremony to celebrate their new joint laboratory for SiC power devices.
The two companies recently held an opening ceremony to celebrate their new joint laboratory for SiC power devices.
Allegro MicroSystems announced the launch of the ACS37800, a Hall-effect power monitoring IC for single-phase AC and DC…
Allegro MicroSystems announced the launch of the ACS37800, a Hall-effect power monitoring IC for single-phase AC and DC solutions in a small PCB…
This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and…
This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and capacitive methods, though…
The MinE-CAP device reduces the input bulk capacitor size, reduces in-rush current by up to 95%, and eliminates NTC…
The MinE-CAP device reduces the input bulk capacitor size, reduces in-rush current by up to 95%, and eliminates NTC thermistors and associated…
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
STMicro and Advantest create an advanced test cell to help improve efficiency of semiconductor testing and overall operations.
STMicro and Advantest create an advanced test cell to help improve efficiency of semiconductor testing and overall operations.
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
As electrification advances, the demand for compact, lightweight and robust electronic control substrates continues to grow.
As electrification advances, the demand for compact, lightweight and robust electronic control substrates continues to grow.
Hassane El-Khoury, the former chief executive officer and president of Cypress Semiconductor, has been named the new CEO…
Hassane El-Khoury, the former chief executive officer and president of Cypress Semiconductor, has been named the new CEO and president of ON…
This article highlights NIC Components NCST-C series of current sensing SMT chip resistors utilizing low-cost thick film…
This article highlights NIC Components NCST-C series of current sensing SMT chip resistors utilizing low-cost thick film construction.
Melexis, a microelectronics company based in Belgium, has released a second generation medium-speed current sensor, the…
Melexis, a microelectronics company based in Belgium, has released a second generation medium-speed current sensor, the MLX91211 IC line.
What will the beginning of 2021 look like and how could the power and semiconductor industries be affected?
What will the beginning of 2021 look like and how could the power and semiconductor industries be affected?
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and…
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and 100% compliance with…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
This article highlights Maxim Integrated MAX17320 2 to 4 series cell Li-ion fuel gauge IC as the industry’s first to…
This article highlights Maxim Integrated MAX17320 2 to 4 series cell Li-ion fuel gauge IC as the industry’s first to monitor self-discharge…
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the…
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the supply of silicon carbide…
The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The Dual-Channel H-bridge device with PWM control will drive a single stepper motor or two brushed DC motors
The Dual-Channel H-bridge device with PWM control will drive a single stepper motor or two brushed DC motors
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