This article highlights Maxim Integrated MAX17320 2 to 4 series cell Li-ion fuel gauge IC as the industry’s first to monitor self-discharge…
This article highlights Maxim Integrated MAX17320 2 to 4 series cell Li-ion fuel gauge IC as the industry’s first to monitor self-discharge…
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the…
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the supply of silicon carbide…
The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The Dual-Channel H-bridge device with PWM control will drive a single stepper motor or two brushed DC motors
The Dual-Channel H-bridge device with PWM control will drive a single stepper motor or two brushed DC motors
The 65 watt DC/DC converters can switch at 2MHz, operate with a DC input ranging up to 24 volts, and are offered in 3mm X…
The 65 watt DC/DC converters can switch at 2MHz, operate with a DC input ranging up to 24 volts, and are offered in 3mm X 3mm QFN packages
The MM5130, with 4 channels, 25W power handling and DC-26GHz operation in a miniaturized surface-mount package, brings…
The MM5130, with 4 channels, 25W power handling and DC-26GHz operation in a miniaturized surface-mount package, brings major improvements to…
This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC)…
This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC) that provides the…
The new chip enables wireless charging to take place almost as quickly as charging via cable
The new chip enables wireless charging to take place almost as quickly as charging via cable
The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or…
The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or decreasing operating…
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are…
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are equipped with enable, power…
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its…
United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its business across asian markets.
This article describes the steps of development and research carried out to design a clamping system for disc…
This article describes the steps of development and research carried out to design a clamping system for disc semiconductors and analyzes the…
The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for…
The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for several reasons.
Alpha and Omega Semiconductor introduced a series of Transient Voltage Suppressor (TVS) for high-speed line protection…
Alpha and Omega Semiconductor introduced a series of Transient Voltage Suppressor (TVS) for high-speed line protection using the best-in-class low…
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