This linear regulator also ensures robust circuit protection, such as overcurrent protection, thermal shutdown and the power good signal, which…
This linear regulator also ensures robust circuit protection, such as overcurrent protection, thermal shutdown and the power good signal, which…
This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and…
This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential…
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.
Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates…
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um…
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
This article discusses the challenges that thermal management raises due to increased power density, especially with…
This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).
This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.
This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology,…
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and…
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…
The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event…
The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event online for the second year…
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which…
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
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