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GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.


Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…


Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.


Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications


Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…


PCIM Europe to Continue as an Online Event This Year

PCIM Europe to Continue as an Online Event This Year

The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event online for the second year…


News Feb 27, 2021 by Stephanie Leonida
Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.


1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…


Efficient Power Conversion Debuts Laser Driver IC Family

Efficient Power Conversion Debuts Laser Driver IC Family

The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.


Infineon to Host Online Industrial WBG Developer Forum

Infineon to Host Online Industrial WBG Developer Forum

German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees can expect.


News Feb 22, 2021 by Shannon Cuthrell
Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…


Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.


Vishay Introduces a Line of Chip Capacitors With Lead-Bearing Finish Terminations

Vishay Introduces a Line of Chip Capacitors With Lead-Bearing Finish Terminations

The new surface-mounted multilayer ceramic chip capacitors are aimed at ameliorating the harmful effects of “tin whiskers”


Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…


Alpha And Omega Semiconductor Unveils USB-C Power Delivery Source Protection Switch

Alpha And Omega Semiconductor Unveils USB-C Power Delivery Source Protection Switch

The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance


Renesas Agrees to Buy Power Management Company Dialog Semiconductor

Renesas Agrees to Buy Power Management Company Dialog Semiconductor

Japanese semiconductor giant Renesas is acquiring U.K.-based integrated circuit provider Dialog Semiconductor for nearly $6 billion.


News Feb 10, 2021 by Shannon Cuthrell
Toshiba Adds New eFuse IC, an Electronic Fuse for Repeated Use that Offers Adjustable Overvoltage Protection

Toshiba Adds New eFuse IC, an Electronic Fuse for Repeated Use that Offers Adjustable Overvoltage Protection

The TCKE712BNL protects power lines with an overvoltage protection function that can be adjusted to user requirements with external resistors.


Maxim Integrated’s MPPT-Based Solar Harvesting IC Helps Designers Optimize System Efficiency and Output

Maxim Integrated’s MPPT-Based Solar Harvesting IC Helps Designers Optimize System Efficiency and Output

Maxim Integrated, an industry leader with a broad portfolio of high-performance semiconductors has released the MAX20361, a single/multi-cell solar…


IGBT Module Contributes to Energy Saving in Railway Transportation

IGBT Module Contributes to Energy Saving in Railway Transportation

Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the railway market.


High Flux Titanium Series (GT Grade)

High Flux Titanium Series (GT Grade)

This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that is specialized in server…