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UnitedSiC Launches a New FET-Jet Calculator

UnitedSiC Launches a New FET-Jet Calculator

This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…


Isolated Gate Driver from STMicroelectronics Safely Controls Silicon-Carbide MOSFETs

Isolated Gate Driver from STMicroelectronics Safely Controls Silicon-Carbide MOSFETs

This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…


GaN Systems and Silanna Semiconductor Release ACF Charger Reference Design

GaN Systems and Silanna Semiconductor Release ACF Charger Reference Design

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications


Tower Semiconductor Introduces a Newly Developed, State-of-the-art Galvanic Isolation Technology

Tower Semiconductor Introduces a Newly Developed, State-of-the-art Galvanic Isolation Technology

This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…


ON Semiconductor Expands Its Line Of 650V SiC MOSFETs

ON Semiconductor Expands Its Line Of 650V SiC MOSFETs

The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.


Understanding Thermal Management of Chip-Scale GaN Devices

Understanding Thermal Management of Chip-Scale GaN Devices

This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).


ON Semiconductor launches World’s First Automotive Qualified SiPM  Array Product for LiDAR Applications

ON Semiconductor launches World’s First Automotive Qualified SiPM Array Product for LiDAR Applications

This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.


GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.


Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…


Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.


Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications


Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…


PCIM Europe to Continue as an Online Event This Year

PCIM Europe to Continue as an Online Event This Year

The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event online for the second year…


News Feb 27, 2021 by Stephanie Leonida
Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.


1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…


Efficient Power Conversion Debuts Laser Driver IC Family

Efficient Power Conversion Debuts Laser Driver IC Family

The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.


Infineon to Host Online Industrial WBG Developer Forum

Infineon to Host Online Industrial WBG Developer Forum

German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees can expect.


News Feb 22, 2021 by Shannon Cuthrell
Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…


Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.


Vishay Introduces a Line of Chip Capacitors With Lead-Bearing Finish Terminations

Vishay Introduces a Line of Chip Capacitors With Lead-Bearing Finish Terminations

The new surface-mounted multilayer ceramic chip capacitors are aimed at ameliorating the harmful effects of “tin whiskers”