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Maxim’s Automotive Buck-Boost Controller Enables Automotive USB Power Delivery Ports

Maxim’s Automotive Buck-Boost Controller Enables Automotive USB Power Delivery Ports

Maxim Integrated introduces MAX25430 that slashes design size up to 40 percent and eliminates microcontrollers, metal enclosures and heat sinks for…


Switching Power Supplies with More than 96% Efficiency Due to the Use of GaN Transistors

Switching Power Supplies with More than 96% Efficiency Due to the Use of GaN Transistors

In this article, learn how the use of GaN transistors was realized and measured at the PFC stage of a Traco Power power supply unit, as well as…


Analyzing the Advantages of 100V GaN in 48V Applications

Analyzing the Advantages of 100V GaN in 48V Applications

This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.


Researchers Create an Efficient, Heat-Resistant, Green Energy Storage System

Researchers Create an Efficient, Heat-Resistant, Green Energy Storage System

Energy storage via an improved redox flow battery solution from researchers at the Friedrich Schiller University has been introduced to the power…


News Oct 13, 2020 by Stephanie Leonida
STMicroelectronics Unveils Half-Bridge Driver Packaged With Two Power GaN HEMTs

STMicroelectronics Unveils Half-Bridge Driver Packaged With Two Power GaN HEMTs

The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W


Testing Gallium Nitride Devices Under Extreme Voltage and Current Stress

Testing Gallium Nitride Devices Under Extreme Voltage and Current Stress

This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that demonstrate the exceptional…


Fuji Electric Grows its Offering of IGBT-based Intelligent Power Modules 

Fuji Electric Grows its Offering of IGBT-based Intelligent Power Modules 

Fugi has added two 50 watt and two 75 watt devices to it’s 7th-Generation X-Series Portfolio.


United SiC Collaborates with EDOM Technology and Macnica Inc. to Expand Product Offerings

United SiC Collaborates with EDOM Technology and Macnica Inc. to Expand Product Offerings

United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its business across asian markets.


News Oct 09, 2020 by Stephanie Leonida
EPC Space Announces a Family of Radiation-Hardened 40V to 300V GaN Power Transistors

EPC Space Announces a Family of Radiation-Hardened 40V to 300V GaN Power Transistors

The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace


Paragraf’s Graphene Hall-Effect Sensors Are Space Bound

Paragraf’s Graphene Hall-Effect Sensors Are Space Bound

Paragraf’s graphene hall-effect sensors (GHS) has been deemed mission-ready for high-radiation applications in space by the UK’s National…


Modern Clamping Systems for Testing Power Semiconductor Devices

Modern Clamping Systems for Testing Power Semiconductor Devices

This article describes the steps of development and research carried out to design a clamping system for disc semiconductors and analyzes the…


EPC’s Newest 100V eGaN FET Family Outclasses Classical Silicon MOSFETs

EPC’s Newest 100V eGaN FET Family Outclasses Classical Silicon MOSFETs

This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT synchronous rectification


NXP Opens New Advanced GaN Fab in Arizona

NXP Opens New Advanced GaN Fab in Arizona

Dutch-American semiconductor giant NXP opened a new RF GaN wafer fab in Arizona this week.


News Oct 01, 2020 by Shannon Cuthrell
Tailored to Perform in Resonant Topologies: Infineon’s New 650V CoolMOS CFD7

Tailored to Perform in Resonant Topologies: Infineon’s New 650V CoolMOS CFD7

Infineon Technologies 650 V CoolMOS™ CFD7 product family for SMPS designs in industrial applications recent technology trends include the need…


Space-Qualified Rad-Hard Enhancement-Mode GaN Drivers and Power Stages

Space-Qualified Rad-Hard Enhancement-Mode GaN Drivers and Power Stages

EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.


STMicroelectronics Pioneers Smaller and Faster Chargers and Power Supplies with World’s First Driver and GaN Device

STMicroelectronics Pioneers Smaller and Faster Chargers and Power Supplies with World’s First Driver and GaN Device

STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon technology along with a pair of…


Hard Paralleling SiC MOSFET-Based Power Modules

Hard Paralleling SiC MOSFET-Based Power Modules

The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for several reasons.


Alpha and Omega Semiconductor Introduces 4-Channel Ultra-Low Capacitance Ultra-Low Clamping Voltage TVS Array

Alpha and Omega Semiconductor Introduces 4-Channel Ultra-Low Capacitance Ultra-Low Clamping Voltage TVS Array

Alpha and Omega Semiconductor introduced a series of Transient Voltage Suppressor (TVS) for high-speed line protection using the best-in-class low…


Telechips Chooses Dialog Semiconductor as its Preferred Power Management Partner

Telechips Chooses Dialog Semiconductor as its Preferred Power Management Partner

Dialog Semiconductor becomes Telechips' chosen partner for the further development of power management solutions.


News Sep 29, 2020 by Stephanie Leonida
Infineon’s TRENCHSTOP™ IGBT7 Technology is Available in a TO-247 Housing

Infineon’s TRENCHSTOP™ IGBT7 Technology is Available in a TO-247 Housing

This article highlights Infineon Technologies AG TRENCHSTOP IGBT7 technology in a discrete housing.


News Sep 27, 2020 by Hailey Stewart