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Infineon Adds GaN Cleanroom in Arizona

Infineon Adds GaN Cleanroom in Arizona


News Dec 04, 2016 by Jeff Shepard
16bit Tough MCUs Optimized for Rechargeable NiMH Applications

16bit Tough MCUs Optimized for Rechargeable NiMH Applications

LAPIS Semiconductor, a member of the ROHM group, has announced the development of the ML620130 family of 16bit low power MCUs, optimized for…


new products Dec 02, 2016 by ROHM
Interview Electronics with Diamonds

Interview Electronics with Diamonds

Since quite some time, Silicon is still the workhorse of the electronics industry, but semiconductors with a broad bandgap (WBGS) are already…


200 Degree Celsius High Voltage Capacitor Products

200 Degree Celsius High Voltage Capacitor Products

KEMET Corporation announced the addition of EIA 2824, 3040, 3640, and 4540 case sizes to the HV-HT surface mount multilayer ceramic capacitor…


TVS Diodes Suited to HighSpeed Interfaces

TVS Diodes Suited to HighSpeed Interfaces

Toshiba Electronics Europe has released ESD protection diodes based on its 4th generation ESD diode array process (EAP-IV), which uses Toshiba’s…


Control Method for a Reverse Conducting IGBT

Control Method for a Reverse Conducting IGBT

This article discusses the advantages of combining the functionality of an IGBT and diode resulting in a reverse conducting IGBT (RC-IGBT).


SMIC Opens Analog and Specialty Semiconductor Subsidiary

SMIC Opens Analog and Specialty Semiconductor Subsidiary


News Nov 27, 2016 by Jeff Shepard
Innovative 7in1 IGBT Packages for Scalable and Easy Design of Industrial Drives and Inverters

Innovative 7in1 IGBT Packages for Scalable and Easy Design of Industrial Drives and Inverters

This article introduces Mitsubishi Electric's NX-Series 7-in-1 IGBT Modules and its benefits in terms of footprint and scalability.


From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

From IGBT to SiC MOSFET A stone step for smooth replacement in Industrial Applications

This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.


Asymmetrical Output DC-DCs Optimized for IGBT Driver

Asymmetrical Output DC-DCs Optimized for IGBT Driver

GaN used to Design 2.5MHz 3kW Resonant DC-DC

GaN used to Design 2.5MHz 3kW Resonant DC-DC


News Nov 17, 2016 by Jeff Shepard
Isolated 2A Gate Driver for IGBTs, GaN and SiC

Isolated 2A Gate Driver for IGBTs, GaN and SiC

500V and 700V PLZT Capacitors for Use with GaN and SiC

500V and 700V PLZT Capacitors for Use with GaN and SiC

Capacitors for Wide Band Gap Semiconductor Power Systems

Capacitors for Wide Band Gap Semiconductor Power Systems

1200V SiC Trench FETs Reduce RDS(on) by 50%

1200V SiC Trench FETs Reduce RDS(on) by 50%

Miniaturized DC-DCs for IGBT & SiC Gate Drives

Miniaturized DC-DCs for IGBT & SiC Gate Drives

Gen-2 TO-220 650V GaN FET with 72mOhms RDS(on)

Gen-2 TO-220 650V GaN FET with 72mOhms RDS(on)

Wolfspeed Wins 2016 R&D 100 Award for SiC EV Inverter

Wolfspeed Wins 2016 R&D 100 Award for SiC EV Inverter


News Nov 08, 2016 by Jeff Shepard
GaN Transistor Evaluation Platforms

GaN Transistor Evaluation Platforms

High-Speed Gate Driver for GaN Power Transistors

High-Speed Gate Driver for GaN Power Transistors