Latest Semiconductors Articles

STMicroelectronics has introduced the industry’s first 800V surface-mount Silicon Controlled Rectifiers (SCR, or…

STMicroelectronics has introduced the industry’s first 800V surface-mount Silicon Controlled Rectifiers (SCR, or thyristor) specified for…

Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET…

Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET type sink output.

This article discusses the advances in superjunction MOSFETs and SiC Rectifiers and how they can improve on-resistance…

This article discusses the advances in superjunction MOSFETs and SiC Rectifiers and how they can improve on-resistance and noise of power supply…

This article discusses the technical aspects of ABB's newly developed Reverse Conducting Integrated Gate Commutated…

This article discusses the technical aspects of ABB's newly developed Reverse Conducting Integrated Gate Commutated Thyristor (RC-IGCT) platform.

LAPIS Semiconductor, a member of the ROHM group, has announced the development of the ML620130 family of 16bit low power…

LAPIS Semiconductor, a member of the ROHM group, has announced the development of the ML620130 family of 16bit low power MCUs, optimized for…

Since quite some time, Silicon is still the workhorse of the electronics industry, but semiconductors with a broad…

Since quite some time, Silicon is still the workhorse of the electronics industry, but semiconductors with a broad bandgap (WBGS) are already…

KEMET Corporation announced the addition of EIA 2824, 3040, 3640, and 4540 case sizes to the HV-HT surface mount…

KEMET Corporation announced the addition of EIA 2824, 3040, 3640, and 4540 case sizes to the HV-HT surface mount multilayer ceramic capacitor…

Toshiba Electronics Europe has released ESD protection diodes based on its 4th generation ESD diode array process…

Toshiba Electronics Europe has released ESD protection diodes based on its 4th generation ESD diode array process (EAP-IV), which uses Toshiba’s…

This article discusses the advantages of combining the functionality of an IGBT and diode resulting in a reverse…

This article discusses the advantages of combining the functionality of an IGBT and diode resulting in a reverse conducting IGBT (RC-IGBT).

This article introduces Mitsubishi Electric's NX-Series 7-in-1 IGBT Modules and its benefits in terms of footprint and…

This article introduces Mitsubishi Electric's NX-Series 7-in-1 IGBT Modules and its benefits in terms of footprint and scalability.

This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and…

This article highlights the advantages of transitioning to SiC MOSFETs from IGBT counterparts in terms of technical and economic aspects.