Diodes Incorporated announced its Linear Mux/DeMux ReDriver with integrated USB-C detection for equipment implementing of USB Type-C® interface.
Diodes Incorporated announced its Linear Mux/DeMux ReDriver with integrated USB-C detection for equipment implementing of USB Type-C® interface.
This article discusses how the cost differences can be bridged by the benefits of the 4x inductor size reduction, smaller…
This article discusses how the cost differences can be bridged by the benefits of the 4x inductor size reduction, smaller heat sink and smaller…
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
For the emerging mega-watt applications with SiC power devices, the proper validation of output chokes poses great challenges.
For the emerging mega-watt applications with SiC power devices, the proper validation of output chokes poses great challenges.
X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities
X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities
Infineon Technologies expands its Schottky Diode portfolio by adding six devices in D2PAK real 2-pin package.
Infineon Technologies expands its Schottky Diode portfolio by adding six devices in D2PAK real 2-pin package.
This article introduces MORNSUN's PV200-29Bxx series and LMF150-20Bxx series.
This article introduces MORNSUN's PV200-29Bxx series and LMF150-20Bxx series.
This article highlights Broadcom isolation technologies, namely the optocoupler, magnetic coupler, and capacitive coupler.
This article highlights Broadcom isolation technologies, namely the optocoupler, magnetic coupler, and capacitive coupler.
By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power…
By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power Integrations delivers a…
The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors…
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors for a soft-switching LLC…
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