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Understanding Thermal Management of Chip-Scale GaN Devices

Understanding Thermal Management of Chip-Scale GaN Devices

This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).


ON Semiconductor launches World’s First Automotive Qualified SiPM  Array Product for LiDAR Applications

ON Semiconductor launches World’s First Automotive Qualified SiPM Array Product for LiDAR Applications

This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.


GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.


Power Companies Close Out 2020 with Growth and New Opportunities

Power Companies Close Out 2020 with Growth and New Opportunities

A look into the latest quarterly and full-year earnings results from the power electronics companies.


News Mar 10, 2021 by Shannon Cuthrell
Silicon Labs Incorporates New Technology into Wolfspeed’s Wolfpack Series

Silicon Labs Incorporates New Technology into Wolfspeed’s Wolfpack Series

Silicon Labs Boosts Wolfspeed’s Power Modules to accelerate fast-charging development for electric vehicles (EVs).


Eliminating EMC at the Source

Eliminating EMC at the Source

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.


Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…


Infineon’s CoolGaN Delivers Efficiency and Reliability to Telecom Power Applications

Infineon’s CoolGaN Delivers Efficiency and Reliability to Telecom Power Applications

Infineon’s GaN devices are qualified according to JEDEC standards, offering lifetimes beyond 15 years, and are a perfect fit for industrial…


Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.


Cambridge GaN Devices Receives $9.5 Million in Series A Funding

Cambridge GaN Devices Receives $9.5 Million in Series A Funding

Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.


News Mar 04, 2021 by Stephanie Leonida
3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

This article introduces software MFis Wire and its advantages in significantly shortening time for creating complex 3D geometry models of bond wire…


Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…


Nexperia Announces Increase in R&D and Global Production Spending

Nexperia Announces Increase in R&D and Global Production Spending

The Dutch semiconductor manufacturer announced plans to increase its investment in R&D and production capacity in 2021.


News Mar 02, 2021 by Shannon Cuthrell
Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications


Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…


ROHM Debuts a Line of -40V/-60V P-Channel MOSFETs in Single and Dual Configurations

ROHM Debuts a Line of -40V/-60V P-Channel MOSFETs in Single and Dual Configurations

The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices


PCIM Europe to Continue as an Online Event This Year

PCIM Europe to Continue as an Online Event This Year

The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event online for the second year…


News Feb 27, 2021 by Stephanie Leonida
Graphene Flagship Develops Method for Graphene Integration into Silicon Wafers

Graphene Flagship Develops Method for Graphene Integration into Silicon Wafers

The Graphene Flagship’s industry and academic partners combined their knowledge and expertise to integrate high-quality graphene into silicon…


News Feb 26, 2021 by Stephanie Leonida
Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.


1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…