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Cambridge GaN Devices Receives $9.5 Million in Series A Funding

Cambridge GaN Devices Receives $9.5 Million in Series A Funding

Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.


News Mar 04, 2021 by Stephanie Leonida
3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

This article introduces software MFis Wire and its advantages in significantly shortening time for creating complex 3D geometry models of bond wire…


Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…


Nexperia Announces Increase in R&D and Global Production Spending

Nexperia Announces Increase in R&D and Global Production Spending

The Dutch semiconductor manufacturer announced plans to increase its investment in R&D and production capacity in 2021.


News Mar 02, 2021 by Shannon Cuthrell
Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications


Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…


ROHM Debuts a Line of -40V/-60V P-Channel MOSFETs in Single and Dual Configurations

ROHM Debuts a Line of -40V/-60V P-Channel MOSFETs in Single and Dual Configurations

The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices


PCIM Europe to Continue as an Online Event This Year

PCIM Europe to Continue as an Online Event This Year

The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event online for the second year…


News Feb 27, 2021 by Stephanie Leonida
Graphene Flagship Develops Method for Graphene Integration into Silicon Wafers

Graphene Flagship Develops Method for Graphene Integration into Silicon Wafers

The Graphene Flagship’s industry and academic partners combined their knowledge and expertise to integrate high-quality graphene into silicon…


News Feb 26, 2021 by Stephanie Leonida
Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.


1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…


Nexperia Extends LFPAK56D MOSFET Line-up with AEC-Q101-qualified Half-bridge Package

Nexperia Extends LFPAK56D MOSFET Line-up with AEC-Q101-qualified Half-bridge Package

The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC…


Efficient Power Conversion Debuts Laser Driver IC Family

Efficient Power Conversion Debuts Laser Driver IC Family

The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.


Ricoh Electronics Devices Launches a 4-Channel, High-Voltage Window Voltage Detector

Ricoh Electronics Devices Launches a 4-Channel, High-Voltage Window Voltage Detector

For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly, as the new product is…


Infineon to Host Online Industrial WBG Developer Forum

Infineon to Host Online Industrial WBG Developer Forum

German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees can expect.


News Feb 22, 2021 by Shannon Cuthrell
Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…


EPC and Renesas Introduce a Demo Board Showcasing GaN Technology

EPC and Renesas Introduce a Demo Board Showcasing GaN Technology

The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon


STMicroelectronics Eases Design of USB Type-C Power Adapters with Efficient Power Delivery and PPS Reference Design

STMicroelectronics Eases Design of USB Type-C Power Adapters with Efficient Power Delivery and PPS Reference Design

This article highlights STMicroelectronics STEVAL-USBPD27S reference design combines the STM32G071 microcontroller (MCU), which integrates a…


Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.


Vishay Introduces a Line of Chip Capacitors With Lead-Bearing Finish Terminations

Vishay Introduces a Line of Chip Capacitors With Lead-Bearing Finish Terminations

The new surface-mounted multilayer ceramic chip capacitors are aimed at ameliorating the harmful effects of “tin whiskers”