This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.
This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology,…
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…
Infineon’s GaN devices are qualified according to JEDEC standards, offering lifetimes beyond 15 years, and are a…
Infineon’s GaN devices are qualified according to JEDEC standards, offering lifetimes beyond 15 years, and are a perfect fit for industrial…
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.
Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.
This article introduces software MFis Wire and its advantages in significantly shortening time for creating complex 3D…
This article introduces software MFis Wire and its advantages in significantly shortening time for creating complex 3D geometry models of bond wire…
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of…
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…
The Dutch semiconductor manufacturer announced plans to increase its investment in R&D and production capacity in 2021.
The Dutch semiconductor manufacturer announced plans to increase its investment in R&D and production capacity in 2021.
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and…
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…
The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices
The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices
The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event…
The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event online for the second year…
The Graphene Flagship’s industry and academic partners combined their knowledge and expertise to integrate high-quality…
The Graphene Flagship’s industry and academic partners combined their knowledge and expertise to integrate high-quality graphene into silicon…
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which…
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…
The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including…
The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC…
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly,…
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly, as the new product is…
German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees…
German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees can expect.
This article is the first in a series of articles discussing three topics that can help power systems designers achieve…
This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…
Facebook
Google
GitHub
Linkedin