This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…
This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…
The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance
The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance
Japanese semiconductor giant Renesas is acquiring U.K.-based integrated circuit provider Dialog Semiconductor for nearly…
Japanese semiconductor giant Renesas is acquiring U.K.-based integrated circuit provider Dialog Semiconductor for nearly $6 billion.
The TCKE712BNL protects power lines with an overvoltage protection function that can be adjusted to user requirements…
The TCKE712BNL protects power lines with an overvoltage protection function that can be adjusted to user requirements with external resistors.
Maxim Integrated, an industry leader with a broad portfolio of high-performance semiconductors has released the MAX20361,…
Maxim Integrated, an industry leader with a broad portfolio of high-performance semiconductors has released the MAX20361, a single/multi-cell solar…
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the…
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the railway market.
The new driver features dual 10 amp source and sink drive capabilities and an integrated thermal pad to reduce junction…
The new driver features dual 10 amp source and sink drive capabilities and an integrated thermal pad to reduce junction to case thermal resistance
This article highlights Infineon Technologies AG 650 V CoolSiC™ Hybrid IGBT portfolio in a discrete package with 650 V…
This article highlights Infineon Technologies AG 650 V CoolSiC™ Hybrid IGBT portfolio in a discrete package with 650 V blocking voltage.
A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator…
A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator capable of stable operation in…
The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained…
The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications
The new devices are aimed at data center applications and supply 12 VDC at output powers ranging from 1.5 to 3.2 kW
The new devices are aimed at data center applications and supply 12 VDC at output powers ranging from 1.5 to 3.2 kW
This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that…
This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that is specialized in server…
ROHM Semiconductor recently wrapped up construction on a new five-floor SiC power device factory that sources 100% of its…
ROHM Semiconductor recently wrapped up construction on a new five-floor SiC power device factory that sources 100% of its electricity from…
The new device enables the fastest wireless charging for smartphones, notebooks and laptops.
The new device enables the fastest wireless charging for smartphones, notebooks and laptops.
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection…
Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection strategies commonly employed in ICs.
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility…
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into…
From a list of three nominees, the Global Semiconductor Alliance announced Vicor as the 2020 GSA Award for Analyst…
From a list of three nominees, the Global Semiconductor Alliance announced Vicor as the 2020 GSA Award for Analyst Favorite Semiconductor Company.
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC Buck Converter looks to…