GaN Systems Inc. launches the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors…
GaN Systems Inc. launches the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors based on its three core…
Integrated Device Technology announced its collaboration with Efficient Power Conversion (EPC) to develop technology…
Integrated Device Technology announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride
Cree, Inc. has introduced its latest break-through in SiC power device technology: the industry’s first 900V MOSFET…
Cree, Inc. has introduced its latest break-through in SiC power device technology: the industry’s first 900V MOSFET platform optimized for…
ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with…
ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with breakdown voltage of 1700V.
GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, announced topside cooling…
GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, announced topside cooling technology in its wide range of…
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.
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