ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with breakdown voltage of 1700V.
ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with breakdown voltage of 1700V.
GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, announced topside cooling…
GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, announced topside cooling technology in its wide range of…
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.