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3rd Gen SiC MOSFETs at PCIM

3rd Gen SiC MOSFETs at PCIM

ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with breakdown voltage of 1700V.


new products May 01, 2015 by ROHM
GaN with Topside Cooling for Simpler PCB Design

GaN with Topside Cooling for Simpler PCB Design

GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, announced topside cooling technology in its wide range of…


new products May 01, 2015 by GaN Systems
Monolithic Gallium Nitride Power Transistor Half Bridge

Monolithic Gallium Nitride Power Transistor Half Bridge

EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.


new products May 01, 2015 by EPC
Enhancement Mode and Cascode  Configuration GaN-on-Silicon Platforms

Enhancement Mode and Cascode Configuration GaN-on-Silicon Platforms

Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.


100A / 1200V Silicon-Carbide Hybrid Module

100A / 1200V Silicon-Carbide Hybrid Module

97% Efficient 48V-to-12V POL with Monolithic GaN Half-Bridge

97% Efficient 48V-to-12V POL with Monolithic GaN Half-Bridge

Zolt set to Jolt Adapter makers with SiC-based 70W Design

Zolt set to Jolt Adapter makers with SiC-based 70W Design

600V GaN Transistor in TO-247

600V GaN Transistor in TO-247

Enhancement-Mode and Cascode and GaN-on-Silicon Platforms

Enhancement-Mode and Cascode and GaN-on-Silicon Platforms

GaN Transistors rated for 600V handle up to 15A

GaN Transistors rated for 600V handle up to 15A

GaN Power Switches with Topside Cooling Simplify PCB Design

GaN Power Switches with Topside Cooling Simplify PCB Design

Rogowski Probes Measure Power SiC and GaN Switch Currents

Rogowski Probes Measure Power SiC and GaN Switch Currents

TI and EPC Partner on 80-V Half-Bridge GaN FET Module

TI and EPC Partner on 80-V Half-Bridge GaN FET Module

60V Regulator Transistor Reduces Footprint for MCU Powering

60V Regulator Transistor Reduces Footprint for MCU Powering

225+ Degrees C SiC Transistors and Rectifiers Offered at Low Cost

225+ Degrees C SiC Transistors and Rectifiers Offered at Low Cost

SiC Module jointly-developed by Panasonic and Sansha

SiC Module jointly-developed by Panasonic and Sansha

1200V SiC FETs target Expanded Applications Areas

1200V SiC FETs target Expanded Applications Areas

650V SiC Schottkys Handle up to 10A

650V SiC Schottkys Handle up to 10A

Monolithic GaN Half-Bridge Enables over 97% Efficient 48V to 12V Buck

Monolithic GaN Half-Bridge Enables over 97% Efficient 48V to 12V Buck

EPC extends Range of GaN Power Transistors to 450V

EPC extends Range of GaN Power Transistors to 450V