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Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

This article introduces the release of EPC's Phase Eight Reliability Report showing the results of qualification stress tests of eGaN FETs and…

new products Sep 03, 2016 by EPC
IPM with SiC Boost Diode for 150kHz Operation

IPM with SiC Boost Diode for 150kHz Operation

new products Aug 21, 2016 by Jeff Shepard
Mitsubishi Launches Super-mini Full SiC DIPIPM

Mitsubishi Launches Super-mini Full SiC DIPIPM

new products Aug 18, 2016 by Jeff Shepard
1-GHz Optically-Isolated Measurements for GaN and SiC

1-GHz Optically-Isolated Measurements for GaN and SiC

new products Aug 16, 2016 by Jeff Shepard
Increasing Reliability Data for GaN Devices

Increasing Reliability Data for GaN Devices

new products Jul 31, 2016 by Jeff Shepard
Gate Drivers for IGBTs and SiC MOSFETs

Gate Drivers for IGBTs and SiC MOSFETs

new products Jul 28, 2016 by Jeff Shepard
1200V SiC MOSFET in SOT227 MiniBLOC

1200V SiC MOSFET in SOT227 MiniBLOC

new products Jul 19, 2016 by Jeff Shepard
SiC-based Power Module includes BJTs and Drivers

SiC-based Power Module includes BJTs and Drivers

new products Jul 14, 2016 by Jeff Shepard
Fast GaN FET Driver Unveiled Utilizing UltraCMOS Technology

Fast GaN FET Driver Unveiled Utilizing UltraCMOS Technology

Peregrine Semiconductor Corp. introduces the word’s fastest GaN FET driver, the UltraCMOS® PE29100

new products Jul 13, 2016 by pSemi Corporation
80V Half-Bridge 33MHz GaN FET Driver

80V Half-Bridge 33MHz GaN FET Driver

new products Jul 11, 2016 by Jeff Shepard
1700V SiC MOSFET Optimized for Industrial Converters

1700V SiC MOSFET Optimized for Industrial Converters

new products Jul 06, 2016 by Jeff Shepard
25A / 650V Hermetic SiC FETs handle 225 Degrees C

25A / 650V Hermetic SiC FETs handle 225 Degrees C

new products Jun 21, 2016 by Jeff Shepard
Delivering first SiC Intelligent Power Modules to Thales

Delivering first SiC Intelligent Power Modules to Thales

This article discusses the announcement of the delivery of the CISSOID's first prototype of 3-phase 1200V/100A SiC MOSFET IPMs to Thales…

new products Jun 16, 2016 by CISSOID
GaN Device claims Highest Efficiency at Highest Frequency

GaN Device claims Highest Efficiency at Highest Frequency

new products Jun 05, 2016 by Jeff Shepard
GaN RF Power Transistors for Cellular Base Stations

GaN RF Power Transistors for Cellular Base Stations

new products May 26, 2016 by Jeff Shepard
300W Plastic-packaged GaN Power Transistor

300W Plastic-packaged GaN Power Transistor

new products May 19, 2016 by Jeff Shepard
SiC Power Devices Aim to Accelerate Automotive Electrification

SiC Power Devices Aim to Accelerate Automotive Electrification

new products May 16, 2016 by Jeff Shepard
5A Gate Drive Optocouplers for IGBTs and SiC/GaN MOSFETs

5A Gate Drive Optocouplers for IGBTs and SiC/GaN MOSFETs

new products May 15, 2016 by Power Pulse1595211359
First GaN Power ICs Leave Silicon Behind

First GaN Power ICs Leave Silicon Behind

Navitas Semiconductor announced the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ monolithically-integrated 650V…

new products May 12, 2016 by Navitas Semiconductor
SiC Schottkys have 50% Higher Current Density and Improved Surge Ratings

SiC Schottkys have 50% Higher Current Density and Improved Surge Ratings

new products May 10, 2016 by Power Pulse1595211359