1200V / 0.04Ω GaN Switches with integral ISO-DRIVER

VisIC Technologies announced a new family of high-voltage GaN devices for switching power electronics designs. With 1200V ratings, the GaN module have typical on resistance (RDS(on)) ratings down to just 0.04Ω. Target applications are power converters for motor drives, three phase power supplies and other applications requiring current switching up to 50A (current limit at the first line of products).

“These low loss GaN devices are setting new industry standards for performance and are based on the VisIC ALL Switch second generation HEMT technology, which combines high levels of cell integration with optimized cell design,” said Gregory Bunin, CTO, VisIC. “This technology supports reduced gate charge and capacitances without losing the benefits of low RDS(ON), with our GaNs offering an ultra-low maximum switching energy down to 140 µJ.”

Switching losses are three to five times lower compared to SIC MOSFETs counterparts. Isolated Gate Driver is integrated in an isolated DIP power package.

These GaN devices represent high-voltage supplements to VisIC's existing ALL Switch line-up of 650V GaN devices and supplied to selected customers.