650V, 1200V, and 1700V Silicon Carbide Schottky Diodes Handle up to 50AFebruary 09, 2020 by Paul Shepard
SemiQ (previously Global Power Technologies Group) has announced the release to production of its new 3rd generation silicon carbide (SiC) diode family featuring blocking voltages of 650V, 1200V and 1700V with forward current starting at 8A up to 50A per chip. Packages include TO-220-2L, TO-220-3L, TO-247-2L, TO-247-3L, SOT-227, TO-263 as well as bare die.
These Gen-3 products represent a huge improvement in reliability, device ruggedness, surge current capability, and moisture resistance. Extensive qualification testing includes over eight million device hours of HTRB and H3TRB.
All packaged devices are 100% tested for unclamped inductive load. As an additional benefit to the customer, SemiQ provides a robust and reliable, redundant supply chain, including 3+ suppliers of SiC substrates, 4+ suppliers of SiC EPI, 2 qualified SiC wafer fabs, and multiple sources for high volume packaging and testing.
Recommended for you: Source-Down 25V Power MOSFET in PQFN 3.3×3.3 mm Package
SiC Schottky diodes from SemiQ operate with zero switching loss to greatly increase efficiency and reducing heat dissipation and requiring smaller heatsinks. These benefits make these products suited for applications in solar inverters, power supplies, motor drives and charging stations.