New Industry Products

100V GaN E-HEMT Full Bridge Evaluation Board

February 19, 2020 by Paul Shepard

The GS61004B-EVBCD evaluation board from GaN Systems allows the user to evaluate the company's GS61004B gallium nitride Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration.  The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.

The evaluation board (EVB) is assembled with two PE29102 GaN E-HEMT drivers and four GS61004B E-HEMT transistors. Headers are included for signal input, signal output, and power connections. Probe points are included for waveform measurements. Provision has been made for a single, suitable heatsink to be fastened against the four E-HEMTs, using the three holes in the center of the board.

GS61004B-EVBCD evaluation board features

  • Operable up to 5MHz
  • Transistor driver operable up to 40MHz
  • Best-in-class propagation delay
  • Optimized, Vcc independent, for matched dead time
  • Integrated dead-time control, resistor-adjustable

GS61004B-EVBCD block diagram (click on diagram to enlarge)

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GS61004B - 100V Enhancement Mode GaN Transistor

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61004B is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

GS61004B Specifications and Features

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0V to 6V)
  • Transient tolerant gate drive (-20V / +10V)
  • Very high switching frequency (f > 100MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 4.6 x 4.4 mm2 PCB footprint
  • RoHS 6 compliant

Target Applications for the GS61004B

  • High efficiency power conversion
  • High density power conversion
  • Enterprise and networking power
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost