100V GaN E-HEMT Full Bridge Evaluation Board
The GS61004B-EVBCD evaluation board from GaN Systems allows the user to evaluate the company's GS61004B gallium nitride Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.
The evaluation board (EVB) is assembled with two PE29102 GaN E-HEMT drivers and four GS61004B E-HEMT transistors. Headers are included for signal input, signal output, and power connections. Probe points are included for waveform measurements. Provision has been made for a single, suitable heatsink to be fastened against the four E-HEMTs, using the three holes in the center of the board.
GS61004B-EVBCD evaluation board features
- Operable up to 5MHz
- Transistor driver operable up to 40MHz
- Best-in-class propagation delay
- Optimized, Vcc independent, for matched dead time
- Integrated dead-time control, resistor-adjustable
GS61004B-EVBCD block diagram (click on diagram to enlarge)
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GS61004B - 100V Enhancement Mode GaN Transistor
The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61004B is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
GS61004B Specifications and Features
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Easy gate drive requirements (0V to 6V)
- Transient tolerant gate drive (-20V / +10V)
- Very high switching frequency (f > 100MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 4.6 x 4.4 mm2 PCB footprint
- RoHS 6 compliant
Target Applications for the GS61004B
- High efficiency power conversion
- High density power conversion
- Enterprise and networking power
- ZVS Phase Shifted Full Bridge
- Half Bridge topologies
- Synchronous Buck or Boost