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High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

Toshiba Expands Family of SiC Schottky Barrier Diodes

Toshiba Expands Family of SiC Schottky Barrier Diodes

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

600V BLDC MOSFET Gate Drive IC for Hybrid, Electric Vehicle and 48V Applications

600V BLDC MOSFET Gate Drive IC for Hybrid, Electric Vehicle and 48V Applications

Silicon Labs Delivers High-Performance 8-Bit MCUs Optimized for Motor Control

Silicon Labs Delivers High-Performance 8-Bit MCUs Optimized for Motor Control

Toshiba Debuts N-ch MOSFET for Lithium-ion Battery Protection Circuits

Toshiba Debuts N-ch MOSFET for Lithium-ion Battery Protection Circuits

Fujitsu Beginning to Sample 150V GaN Power Device, Production Scheduled for 2014

Fujitsu Beginning to Sample 150V GaN Power Device, Production Scheduled for 2014

MOSFET Pairs Help Designers Achieve Highest Power Density and Efficiency

MOSFET Pairs Help Designers Achieve Highest Power Density and Efficiency

Dual EPAD MOSFET Arrays Expand Dynamic Current Range to Eight Orders of Magnitude

Dual EPAD MOSFET Arrays Expand Dynamic Current Range to Eight Orders of Magnitude

LED Driver Features Internal 3.5A / 80V N-Channel FET and PWM Generator

LED Driver Features Internal 3.5A / 80V N-Channel FET and PWM Generator

IXYS ICD Offers 3 New Wide Voltage Range 1.5A MOSFET and IGBT Gate Drivers

IXYS ICD Offers 3 New Wide Voltage Range 1.5A MOSFET and IGBT Gate Drivers

DC-DC Converter Series Designed to Power IGBT Gate Drivers

DC-DC Converter Series Designed to Power IGBT Gate Drivers

Nitronex Introduces 48V GaN-on-Si Power Transistors

Nitronex Introduces 48V GaN-on-Si Power Transistors

Three-Phase MOSFET Controller for Commercial and Industrial Drives with > 10A Loads

Three-Phase MOSFET Controller for Commercial and Industrial Drives with > 10A Loads