Toshiba Debuts N-ch MOSFET for Lithium-ion Battery Protection Circuits

Toshiba America Electronic Components, Inc. (TAEC) today announced the launch of a semi-power N-channel MOSFET for lithium-ion battery protection circuits: the SSM3K324R. Designed for notebook PC lithium-ion battery protection circuits, the SSM3K324R brings on-resistance and low capacitance in a large capacity, high radiation performance package.

A successor to Toshiba's popular SSM3K316T, the SSM3K324R uses the latest UMOSVII-H process to enable a significant reduction in gate switch charge and on-state resistance (RDS(ON)), resulting in greater power efficiency. Toshiba's new N-ch MOSFET is mounted on the SOT-23F package (2.9mm x 2.4mm), which offers superior radiation performance, and can be installed in the SOT-23 package land pattern. Key specifications include: VDSS = 30V; VGSS = +/-12V; ID = 4.0A; RDS(ON) = 109 mOhms at VGS = 1.8V, 72 mOhms at VGS = 2.5V, and 56 mOhms at VGS = 4.5V; and CISS = 200 pF.

"In order to maintain battery longevity – and keep users safe - it is crucial that the correct protection circuit is selected and applied," noted Talayeh Saderi, business development manager for TAEC. "Toshiba has made this choice easy with the addition of our new and improved N-channel MOSFET."

Although they are one of the fastest-growing segments of today's battery market, lithium-ion batteries are not without disadvantages. Fragile by nature, they require protection circuits in order to operate safely. Protection circuit modules limit the peak voltage of each cell during charge and prevent the cell voltage from dropping too low on discharge – as well as prevent accidental battery explosion. Battery packs for notebook PCs are equipped with protection circuits that have the ability to detect a problem and blow an internal fuse before the packs are damaged. Toshiba's new SSM3K324R blows the fuses in the case of such an event.

Toshiba's new N-ch MOSFETs are available now. Budgetary pricing begins at $0.04 with volume discounts available.