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85V Half-Bridge MOSFET Driver with Adaptive Dead Time and Shoot-Through Protection

85V Half-Bridge MOSFET Driver with Adaptive Dead Time and Shoot-Through Protection

P-Channel Gen III MOSFET Features 0.0016-Ohm On-resistance

P-Channel Gen III MOSFET Features 0.0016-Ohm On-resistance

IdealPoE Diode Bridge Integrates Low-Loss MOSFET Base Bridges and Controller

IdealPoE Diode Bridge Integrates Low-Loss MOSFET Base Bridges and Controller

Mitsubishi to Launch Railcar Traction Inverter with All-SiC Power Module

Mitsubishi to Launch Railcar Traction Inverter with All-SiC Power Module

High-Temperature SiC Junction Transistors in Hermetic Packages

High-Temperature SiC Junction Transistors in Hermetic Packages

Solderable and Sinterable Top-Side Bonding for High-Power IGBT Wafers

Solderable and Sinterable Top-Side Bonding for High-Power IGBT Wafers

Asymmetric Package Optimizes Low-Side MOSFET RDS(on) for Synchronous DC-DCs

Asymmetric Package Optimizes Low-Side MOSFET RDS(on) for Synchronous DC-DCs

Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

-20V P-Channel Gen III MOSFET is First in CSP MICRO FOOT Package

-20V P-Channel Gen III MOSFET is First in CSP MICRO FOOT Package

SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

Amantys brings Insight and Performance Monitoring to IGBT Module Systems

Amantys brings Insight and Performance Monitoring to IGBT Module Systems

Toshiba Adds Three Miniature Packages to Automotive MOSFET Portfolio

Toshiba Adds Three Miniature Packages to Automotive MOSFET Portfolio

Silicon Carbide Bare Die up to 8000V from GeneSiC

Silicon Carbide Bare Die up to 8000V from GeneSiC

High-Speed Four-Channel MOSFET Driver Optimized for Medical Ultrasound Applications

High-Speed Four-Channel MOSFET Driver Optimized for Medical Ultrasound Applications

IXYS Releases New 600A 650V IGBT Module Based On XPT IGBT Technology

IXYS Releases New 600A 650V IGBT Module Based On XPT IGBT Technology

Toshiba Adds Lower-Current Devices to SiC Schottky Offering

Toshiba Adds Lower-Current Devices to SiC Schottky Offering

High-Speed IGBT H-Bridge Modules Built to Boost Performance

High-Speed IGBT H-Bridge Modules Built to Boost Performance

650V SiC Schottky Improves Performance in High-power Industrial Applications

650V SiC Schottky Improves Performance in High-power Industrial Applications

Silicon Labs Claims most Energy-Friendly MCUs Based on the ARM Cortex-M0+ Core

Silicon Labs Claims most Energy-Friendly MCUs Based on the ARM Cortex-M0+ Core

EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents