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Toshiba to Develop Transistor Array Series Using 13nm BiCD Process

Toshiba to Develop Transistor Array Series Using 13nm BiCD Process

Power Switching Programmable Mixed-Signal Matrix with 1A FET

Power Switching Programmable Mixed-Signal Matrix with 1A FET

Isolated Primary-Side LED Driver with Integrated 650V FET

Isolated Primary-Side LED Driver with Integrated 650V FET

Seven-channel NMOS Low-Side Driver replaces Darlington Arrays

Seven-channel NMOS Low-Side Driver replaces Darlington Arrays

Wafer-Level Testing for  High-Current and High-Voltage GaN and SiC

Wafer-Level Testing for High-Current and High-Voltage GaN and SiC

150-V N-Channel FET in Thermally-Enhanced PowerPAK SC-70 Package

150-V N-Channel FET in Thermally-Enhanced PowerPAK SC-70 Package

Driver plus Sync FET 40A Power Solution for High-Performance FPGAs

Driver plus Sync FET 40A Power Solution for High-Performance FPGAs

Off-Line PWM Controllers From Allegro feature Integrated Power FET

Off-Line PWM Controllers From Allegro feature Integrated Power FET

Solderable and Sinterable Top-Side Bonding for High-Power IGBT Wafers

Solderable and Sinterable Top-Side Bonding for High-Power IGBT Wafers

Monolithic DC-DC Drives 1A Load with no External Transistor Needed

Monolithic DC-DC Drives 1A Load with no External Transistor Needed

650V SiC Schottky Improves Performance in High-power Industrial Applications

650V SiC Schottky Improves Performance in High-power Industrial Applications

High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

85V Half-Bridge FET Driver features Bootstrap Diode and Programmable Gate Drive

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

High-Power 1206 Wide-Terminal Flat Chip Resistors Handle 0.75W

High-Power 1206 Wide-Terminal Flat Chip Resistors Handle 0.75W

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

LED Driver Features Internal 3.5A / 80V N-Channel FET and PWM Generator

LED Driver Features Internal 3.5A / 80V N-Channel FET and PWM Generator

Nitronex Qualifies 28V / 50W GaN Transistor

Nitronex Qualifies 28V / 50W GaN Transistor