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ON Semiconductor Expands Portfolio for Industrial Motor Drive Applications

ON Semiconductor Expands Portfolio for Industrial Motor Drive Applications

This article highlights ON Semiconductor NXH25C120L2C2, NXH35C120L2C2/2C2E, and NXH50C120L2C2E, which are 25, 35, and 50 Ampere versions of…


new products Apr 27, 2020 by onsemi
250W Digital LLC DC-DC Converter with GaN Power FETs – Reference Design

250W Digital LLC DC-DC Converter with GaN Power FETs – Reference Design

65Vin PSR Flyback DC-DC Converter IC with 100V / 0.75A Integrated MOSFET

65Vin PSR Flyback DC-DC Converter IC with 100V / 0.75A Integrated MOSFET

Power Integrations’ GaN Technology Increases Output Power of High-Efficiency Display PSUs to 75W

Power Integrations’ GaN Technology Increases Output Power of High-Efficiency Display PSUs to 75W

Power Integrations announced that its InnoSwitch™3-MX isolated switcher IC family has been expanded with the addition of three new PowiGaN™…


GaN Increases Output Power of High-Efficiency Display PSUs to 75W

GaN Increases Output Power of High-Efficiency Display PSUs to 75W

Protection IC for 12V Bus with an Integrated MOSFET and Lossless Current Sensing

Protection IC for 12V Bus with an Integrated MOSFET and Lossless Current Sensing

Silanna Semiconductor’s Newest Fully Integrated Active Flyback Controllers Offer High-Efficiency Design

Silanna Semiconductor’s Newest Fully Integrated Active Flyback Controllers Offer High-Efficiency Design

Silanna’s expanded portfolio of active clamp flyback controllers focuses on high power density and low BoM costs.


GaN Switches in 3.3kW Bidirectional Interleaved CCM Totem Pole Bridgeless PFC Reference Design

GaN Switches in 3.3kW Bidirectional Interleaved CCM Totem Pole Bridgeless PFC Reference Design

Power Management IC for i.MX 8M Application Processor Family

Power Management IC for i.MX 8M Application Processor Family

Transphorm Intros SuperGaN Power FETs with Launch of Gen IV GaN Platform

Transphorm Intros SuperGaN Power FETs with Launch of Gen IV GaN Platform

Temperature Sensor IC is Small, Accurate and Versatile

Temperature Sensor IC is Small, Accurate and Versatile

Maxim Integrated’s SIMO Power Management IC Cuts Solution Size by Half and Extends Battery Life by 20% for Wearables and Hearables

Maxim Integrated’s SIMO Power Management IC Cuts Solution Size by Half and Extends Battery Life by 20% for Wearables and Hearables

Breakthrough SIMO technology replaces traditional power management architectures, reducing BOM count by up to 40 percent for compact consumer devices


Transphorm and Microchip Combine High Reliability GaN and Digital Signal Processing Technology to Drive GaN Adoption

Transphorm and Microchip Combine High Reliability GaN and Digital Signal Processing Technology to Drive GaN Adoption

Transphorm announces its partnership with Microchip Technology.


new products Apr 09, 2020 by Transphorm
AEC-Q200 Compliant Chip Inductors Rated to 100µH and 1.35A

AEC-Q200 Compliant Chip Inductors Rated to 100µH and 1.35A

Thick Film Wide Termination Chip Resistors

Thick Film Wide Termination Chip Resistors

Ultrasmall MOSFET Gate-Driver IC Prevents False Triggering

Ultrasmall MOSFET Gate-Driver IC Prevents False Triggering

Ultra-small Gate-Driver IC with TDI for Unprecedented Power Density in Low-Voltage Power Conversion Systems

Ultra-small Gate-Driver IC with TDI for Unprecedented Power Density in Low-Voltage Power Conversion Systems

Infineon Technologies AG adds a device to its cost-effective and compact-size EiceDRIVER™ 1EDN TDI (truly differential inputs) 1-channel…


Transphorm GaN FETs and Microchip Digital Control in 4kW PFC Eval Board

Transphorm GaN FETs and Microchip Digital Control in 4kW PFC Eval Board

ASIL-Ready Hall Sensor IC for Safety-Critical Automotive Systems

ASIL-Ready Hall Sensor IC for Safety-Critical Automotive Systems

Bringing Micro LEDs to the Dimensions of the Silicon Industry with ALLOS’ 200mm and 300mm GaN-on-Si Epiwafers

Bringing Micro LEDs to the Dimensions of the Silicon Industry with ALLOS’ 200mm and 300mm GaN-on-Si Epiwafers

ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.