The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or decreasing operating…
The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or decreasing operating…
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are…
The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are equipped with enable, power…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.
EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.
STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon…
STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon technology along with a pair of…
Alpha and Omega Semiconductor introduced a series of Transient Voltage Suppressor (TVS) for high-speed line protection…
Alpha and Omega Semiconductor introduced a series of Transient Voltage Suppressor (TVS) for high-speed line protection using the best-in-class low…
This article highlights TT Electronics APC Series resistors with its family of high reliability surface mount resistors…
This article highlights TT Electronics APC Series resistors with its family of high reliability surface mount resistors that have been qualified…
Alpha and Omega Semiconductor announced a new series of DrMOS targeting multiphase VR regulators powering…
Alpha and Omega Semiconductor announced a new series of DrMOS targeting multiphase VR regulators powering high-performance GPU and memory in…
The new ICs reduce design complexity while delivering the high measurement accuracy for systems charged with the…
The new ICs reduce design complexity while delivering the high measurement accuracy for systems charged with the protection of cold-chain assets.
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
This article highlights Bel Fuse's 0685P Series of surface mount fast-acting chip fuses with high inrush current…
This article highlights Bel Fuse's 0685P Series of surface mount fast-acting chip fuses with high inrush current withstand capability in a…
Energous Corporation announced a new module that integrates components provided by Dialog Semiconductor in a strategic…
Energous Corporation announced a new module that integrates components provided by Dialog Semiconductor in a strategic partnership to create a…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented Gallium-Nitride (GaN) power ICs, DC-DC…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
This article highlights Taiwan Semiconductor's TSCR4 family of linear CMOS LED driver ICs that provide a much improved…
This article highlights Taiwan Semiconductor's TSCR4 family of linear CMOS LED driver ICs that provide a much improved performance drop-in…
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
Facebook
Google
GitHub
Linkedin