Infineon Technologies AG rolls out its HITFET™+ family of protected low-side switches
Infineon Technologies AG rolls out its HITFET™+ family of protected low-side switches
Toshiba Electronics Europe has launched a high – current 4500V, 1200A power module for use in rail traction,…
Toshiba Electronics Europe has launched a high – current 4500V, 1200A power module for use in rail traction, industrial motor control, renewable…
CISSOID releases CHT-PLUTO, a high-temperature power module that can operate reliably between -55°C and +225°C and can…
CISSOID releases CHT-PLUTO, a high-temperature power module that can operate reliably between -55°C and +225°C and can deliver up to 60A
GaN Systems Inc. launches the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors…
GaN Systems Inc. launches the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors based on its three core…
Integrated Device Technology announced its collaboration with Efficient Power Conversion (EPC) to develop technology…
Integrated Device Technology announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride
Power Integrations launched its 2SC0115T2A0-12 dual-channel gate-driver core for 90 kW to 500 kW inverters and converters.
Power Integrations launched its 2SC0115T2A0-12 dual-channel gate-driver core for 90 kW to 500 kW inverters and converters.
ROHM Semiconductor presented its IPM (Intelligent Power Module) family optimized for high speed and power-efficient…
ROHM Semiconductor presented its IPM (Intelligent Power Module) family optimized for high speed and power-efficient operation in motor driving and…
Toshiba Electronics Europe (TEE) has expanded its family of ultra-high-efficiency, low-voltage MOSFETs by adding new 30V…
Toshiba Electronics Europe (TEE) has expanded its family of ultra-high-efficiency, low-voltage MOSFETs by adding new 30V and 60V devices to the…
Cree, Inc. has introduced its latest break-through in SiC power device technology: the industry’s first 900V MOSFET…
Cree, Inc. has introduced its latest break-through in SiC power device technology: the industry’s first 900V MOSFET platform optimized for…
Alpha and Omega Semiconductor Limited (AOS) introduced the new E-series IGBT platform with the 1200V AOK20B120E1 and…
Alpha and Omega Semiconductor Limited (AOS) introduced the new E-series IGBT platform with the 1200V AOK20B120E1 and 1350V AOK-20B135E1
Texas Instruments introduced the industry’s first magnetic sensing integrated circuit (IC) with a fully integrated…
Texas Instruments introduced the industry’s first magnetic sensing integrated circuit (IC) with a fully integrated fluxgate sensor and…
This article discusses Allegro MicroSystems' A1266, a unique 3-dimensional sensor IC incorporating a combination of…
This article discusses Allegro MicroSystems' A1266, a unique 3-dimensional sensor IC incorporating a combination of vertical and traditional…
StarPower Europe AG is building a European development centre in Nuremberg, Germany – investing close to a million…
StarPower Europe AG is building a European development centre in Nuremberg, Germany – investing close to a million euros in the laboratory
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