Packaging Layout improves FET Thermal Performance
Infineon Technologies AG has launched a new family of StrongIRFET™ MOSFETs for dc powered circuits including battery powered circuits, brushed and brushless dc (BDLC) motor drives. The MOSFETs can bring highest energy efficiency to end-applications such as power and gardening tools, light electric vehicles, drones and e-bikes that demand a high level of energy efficiency but are restricted in available space. This is made possible by the compact Medium Can DirectFET™ housing featuring a new layout.
â€œThe reliability and performance of DirectFET packaging technology is further enhanced with a new layout that now offers even lower thermal resistance. Combined with rugged silicon, these new StrongIRFET DirectFET MOSFETs offer improvements in overall system-level size, efficiency and cost making them well suited to all space constrained applications that require that extra efficiency demanded by the manufacturer and the end-user,â€ said Stephane Ernoux, Product Marketing, Power Management and Multimarket Division, Infineon Technologies.
Parts being introduced include: IRF7480MTRPBF rated for 40V and 217A, with an RDS(on) Typ/Max at 10V of 0.9mÎ© and 1.2mÎ©, respectively, and a Qg of 123nC; the IRF7483MTRPBF rated for 40V and 135A, with an RDS(on) Typ/Max at 10V of 1.7mÎ© and 2.3mÎ©, respectively, and a Qg of 81nC; and IRF60DM206 rated for 60V and 130A, with an RDS(on) Typ/Max at 10V of 2.2mÎ© and 2.9mÎ©, respectively, and a Qg of 133nC; the IRF7580MTRPBF rated for 60V and 114A, with an RDS(on) Typ/Max at 10V of 2.9mÎ© and 3.6mÎ©, respectively, and a Qg of 120nC; and the IRF7780MTRPBF rated for 75V and 89A, with an RDS(on) Typ/Max at 10V of 4.5mÎ© and 5.7mÎ©, respectively, and a Qg of 124nC.
The new StrongIRFET devices are housed in a Medium Can DirectFET package that features dual-sided cooling to deliver high power density and excellent thermal performance. By re-locating the gate pad to the corner of the die on these latest devices, the new layout significantly increases the source contact area to achieve even lower thermal resistance to the PCB than standard DirectFET packages, further improving efficiency, and increasing the scalability of design. The product family features an environmentally-friendly 100 percent lead-free package that is current and future ROHS compliant. Production orders are available immediately.