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1700V SiC Power Module Claims High Reliability in Extreme Environments

1700V SiC Power Module Claims High Reliability in Extreme Environments

High Power GaN Solutions for Server and Automotive Applications

High Power GaN Solutions for Server and Automotive Applications

USB Type-C/PD Controller IC Enables 3A Current Delivery

USB Type-C/PD Controller IC Enables 3A Current Delivery

98.5%-Efficient High-Voltage BLDC Motor Driver IC Family

98.5%-Efficient High-Voltage BLDC Motor Driver IC Family

Power Integrations Launches 98.5% Efficient High Voltage BLDC Motor Driver IC Family

Power Integrations Launches 98.5% Efficient High Voltage BLDC Motor Driver IC Family

Power Integrations announces the release of its BridgeSwitch™ integrated half-bridge (IHB) motor driver IC family.


100V Half-Bridge MOSFET Drivers for 12V-to-48V Bidirectional DC-DCs

100V Half-Bridge MOSFET Drivers for 12V-to-48V Bidirectional DC-DCs

650V Half-Bridge Gate Driver IC with Integrated Bootstrap Diode

650V Half-Bridge Gate Driver IC with Integrated Bootstrap Diode

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.


44V System Cost-Optimized Intelligent Control IC for BLDC Motors

44V System Cost-Optimized Intelligent Control IC for BLDC Motors

Integrated Motor Pre-Driver for Drones, Enabling Small, Quiet, and Highly-Efficient Designs

Integrated Motor Pre-Driver for Drones, Enabling Small, Quiet, and Highly-Efficient Designs

IGBT Modules Rated for 6.5kV/1,000A, 4.5kV/1,500A and 3.3kV/1,800A

IGBT Modules Rated for 6.5kV/1,000A, 4.5kV/1,500A and 3.3kV/1,800A

Expandable and Integrated Bluetooth 5 IC is AEC-Q100 Qualified

Expandable and Integrated Bluetooth 5 IC is AEC-Q100 Qualified

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…


GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and…


new products Oct 30, 2018 by GaN Systems
Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

SiC MOSFETs and Digital Control enable Isolated 1U 11kW Bidirectional DC-DCs

SiC MOSFETs and Digital Control enable Isolated 1U 11kW Bidirectional DC-DCs

AI Chip Claims Dramatic Advantages in Latency and Power-Efficiency

AI Chip Claims Dramatic Advantages in Latency and Power-Efficiency

Gen-3 SiC JFETs with 1200V and 650V Options

Gen-3 SiC JFETs with 1200V and 650V Options

UnitedSiC Expands SiC JFET Portfolio with Gen3 1200V and 650V Options

UnitedSiC Expands SiC JFET Portfolio with Gen3 1200V and 650V Options

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V silicon carbide JFETs,…