Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ…
Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…
GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and…
GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and…
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V…
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V silicon carbide JFETs,…
Diodes Incorporated announced the introduction of the AP22815 and AP22615, two 3A single-channel high-side power switches…
Diodes Incorporated announced the introduction of the AP22815 and AP22615, two 3A single-channel high-side power switches for USB ports and other…
STMicroelectronics and Leti today announced their cooperation to industrialize GaN (gallium nitride)-on-silicon…
STMicroelectronics and Leti today announced their cooperation to industrialize GaN (gallium nitride)-on-silicon technologies for power switching…