A research team led by Associate Professor Masashi Kato from the Nagoya Institute of Technology has improved one of the known non-destructive…
A research team led by Associate Professor Masashi Kato from the Nagoya Institute of Technology has improved one of the known non-destructive…
Gallium nitride (GaN) power conversion products manufacturer Transphorm has recently announced that its device portfolio…
Gallium nitride (GaN) power conversion products manufacturer Transphorm has recently announced that its device portfolio is compatible with…
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates…
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um…
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
This article discusses the challenges that thermal management raises due to increased power density, especially with…
This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source…
This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology,…
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…
Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.
Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of…
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and…
The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…
The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event…
The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event online for the second year…
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which…
This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…
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