The expanded portfolio of intelligent power modules (IPM) includes two liquid cooled devices
The expanded portfolio of intelligent power modules (IPM) includes two liquid cooled devices
This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.
This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.
II-VI establishes its new backend processing line for conductive SiC substrates in Fuzhou, China.
II-VI establishes its new backend processing line for conductive SiC substrates in Fuzhou, China.
Infineon’s Virtual Power Conference, held May 4–6, will feature live expert panels and product demos showcasing the…
Infineon’s Virtual Power Conference, held May 4–6, will feature live expert panels and product demos showcasing the company’s latest energy…
The new power package integrates two 650V GaN power transistors with optimized gate drivers and circuit protection.
The new power package integrates two 650V GaN power transistors with optimized gate drivers and circuit protection.
This article highlights Flex BMR685’s power-handling capabilities make it well-suited to these high-power RF Power…
This article highlights Flex BMR685’s power-handling capabilities make it well-suited to these high-power RF Power Amplifier applications, for…
Scientists from the Nagoya Institute of Technology (NITech) have conducted innovative research about the role of…
Scientists from the Nagoya Institute of Technology (NITech) have conducted innovative research about the role of impurities in Gallium Nitride…
Dutch semiconductor manufacturer Nexperia teams up with China’s United Automotive Electronic Systems Co. on a new…
Dutch semiconductor manufacturer Nexperia teams up with China’s United Automotive Electronic Systems Co. on a new program to develop GaN-based…
Italian automotive manufacturer Marelli has announced the launch of a new line of power modules with a 99.5% efficiency…
Italian automotive manufacturer Marelli has announced the launch of a new line of power modules with a 99.5% efficiency rate for motorsport,…
UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when…
UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when constructing power designs.
Swansea University and Newport Wafer Fab receive government funds to help lead the UK toward net-zero carbon emission…
Swansea University and Newport Wafer Fab receive government funds to help lead the UK toward net-zero carbon emission goals and clean up technology…
The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V
The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V
This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet…
This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…
A research team led by Associate Professor Masashi Kato from the Nagoya Institute of Technology has improved one of the…
A research team led by Associate Professor Masashi Kato from the Nagoya Institute of Technology has improved one of the known non-destructive…
Gallium nitride (GaN) power conversion products manufacturer Transphorm has recently announced that its device portfolio…
Gallium nitride (GaN) power conversion products manufacturer Transphorm has recently announced that its device portfolio is compatible with…
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates…
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…
Facebook
Google
GitHub
Linkedin