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STMicroelectronics Releases an Evaluation Board For 3-Phase Energy Metering

STMicroelectronics Releases an Evaluation Board For 3-Phase Energy Metering

The EVALSTPM-3PHISO provides galvanic isolation and meets tough international accuracy and quality standards.


CUI’s Micro Rotary DIP Switches Ideal for Space-Constrained Designs

CUI’s Micro Rotary DIP Switches Ideal for Space-Constrained Designs

To meet a variety of design requirements, the rotary DIP switch models offer multiple termination types, including gull-wing, angled gull wing, and…


Cambridge GaN Devices Receives $9.5 Million in Series A Funding

Cambridge GaN Devices Receives $9.5 Million in Series A Funding

Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.


News Mar 04, 2021 by Stephanie Leonida
3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

This article introduces software MFis Wire and its advantages in significantly shortening time for creating complex 3D geometry models of bond wire…


Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…


Nexperia Announces Increase in R&D and Global Production Spending

Nexperia Announces Increase in R&D and Global Production Spending

The Dutch semiconductor manufacturer announced plans to increase its investment in R&D and production capacity in 2021.


News Mar 02, 2021 by Shannon Cuthrell
Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications


Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…


ROHM Debuts a Line of -40V/-60V P-Channel MOSFETs in Single and Dual Configurations

ROHM Debuts a Line of -40V/-60V P-Channel MOSFETs in Single and Dual Configurations

The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices


PCIM Europe to Continue as an Online Event This Year

PCIM Europe to Continue as an Online Event This Year

The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event online for the second year…


News Feb 27, 2021 by Stephanie Leonida
Graphene Flagship Develops Method for Graphene Integration into Silicon Wafers

Graphene Flagship Develops Method for Graphene Integration into Silicon Wafers

The Graphene Flagship’s industry and academic partners combined their knowledge and expertise to integrate high-quality graphene into silicon…


News Feb 26, 2021 by Stephanie Leonida
Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.


Embedded World to Host a Wide Array of Power Technologies

Embedded World to Host a Wide Array of Power Technologies

Embedded World 2021 is only a week away. Here’s an overview of what many companies will showcase.


1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…


Nexperia Extends LFPAK56D MOSFET Line-up with AEC-Q101-qualified Half-bridge Package

Nexperia Extends LFPAK56D MOSFET Line-up with AEC-Q101-qualified Half-bridge Package

The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC…


Infineon to Host Online Industrial WBG Developer Forum

Infineon to Host Online Industrial WBG Developer Forum

German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees can expect.


News Feb 22, 2021 by Shannon Cuthrell
Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…


EPC and Renesas Introduce a Demo Board Showcasing GaN Technology

EPC and Renesas Introduce a Demo Board Showcasing GaN Technology

The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon


Digilent Announces its 3000 Series Oscilloscope Family

Digilent Announces its 3000 Series Oscilloscope Family

The new units feature either four or two channels with 14-bit resolution at up to 0.5 GS/s and 16 digital channels


Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.