Texas Instruments introduced the first single-chip 100-V high-side FET driver for high-power lithium-ion battery applications, delivering advanced…
Texas Instruments introduced the first single-chip 100-V high-side FET driver for high-power lithium-ion battery applications, delivering advanced…
Toshiba Electronics Europe has expanded the line-up of its low input current transistor photocouplers with a pair of…
Toshiba Electronics Europe has expanded the line-up of its low input current transistor photocouplers with a pair of 4-channel versions, the…
This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at…
This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at 150ºC junction temperature.
GaN Systems announces its Half-Bridge Evaluation Board which demonstrates the performance of its GaN enhancement mode…
GaN Systems announces its Half-Bridge Evaluation Board which demonstrates the performance of its GaN enhancement mode power semiconductors in real…
This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new…
This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.
Mitsubishi Electric Corporation announced the J1-Series high-power semiconductor modules featuring compact 6-in-1…
Mitsubishi Electric Corporation announced the J1-Series high-power semiconductor modules featuring compact 6-in-1 packages mainly for use in…
This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high…
This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high performance, high power systems.
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