This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.
Texas Instruments introduced the first single-chip 100-V high-side FET driver for high-power lithium-ion battery…
Texas Instruments introduced the first single-chip 100-V high-side FET driver for high-power lithium-ion battery applications, delivering advanced…
Toshiba Electronics Europe has expanded the line-up of its low input current transistor photocouplers with a pair of…
Toshiba Electronics Europe has expanded the line-up of its low input current transistor photocouplers with a pair of 4-channel versions, the…
This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at…
This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at 150ºC junction temperature.
GaN Systems announces its Half-Bridge Evaluation Board which demonstrates the performance of its GaN enhancement mode…
GaN Systems announces its Half-Bridge Evaluation Board which demonstrates the performance of its GaN enhancement mode power semiconductors in real…
This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new…
This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.
Mitsubishi Electric Corporation announced the J1-Series high-power semiconductor modules featuring compact 6-in-1…
Mitsubishi Electric Corporation announced the J1-Series high-power semiconductor modules featuring compact 6-in-1 packages mainly for use in…
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