40V N-Channel Power FET for Automotive Applications
Toshiba Corporation's Semiconductor & Storage Products Company today announced the launch of a 40V N-channel power MOSFET for automobile applications, including dc-dc converters, high-capacity motor drivers for electric power steering (EPS) and semiconductor relays. The latest addition to the MOSFET line-up, the TKR74F04PB, starts shipment immediately.
The TKR74F04PB is rated for 250A of current and a power dissipation of 375W. Electrical characteristics include: Input capacitance (Typ.) of 14200pF, Total gate charge (Typ.) of 227nC, Drain-Source on-resistance (Max) of 0.00074Ω with VGS=10V, and Drain-Source on-resistance (Max) of 0.00098Ω with VGS=6V.
The new product claims the industry’s leading-class low ON-resistance by mounting a chip fabricated with Toshiba’s latest 9th generation trench MOS “U-MOS IX Series†process in a low resistant TO-220SM(W) package. The low ON-resistance and low switching noise level of the new product can contribute to reduced levels of conduction losses and EMI in automotive applications.
