This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high…
This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high performance, high power systems.
GaN Systems Inc. launches the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors…
GaN Systems Inc. launches the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors based on its three core…
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.