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600V / 120A GaN Transistor has 75mOhm On-Resistance

600V / 120A GaN Transistor has 75mOhm On-Resistance


News Apr 15, 2015 by Jeff Shepard
High Efficiency DMOS FET Arrays cut Losses 40%

High Efficiency DMOS FET Arrays cut Losses 40%

Power FET Gate Driver for Automotive Applications

Power FET Gate Driver for Automotive Applications

High-Voltage 16-Cell Li-ion Monitoring IC

High-Voltage 16-Cell Li-ion Monitoring IC

600V GaN Transistor in TO-247

600V GaN Transistor in TO-247

20-V Chipscale FET targets Ultraportables

20-V Chipscale FET targets Ultraportables

TI and EPC Partner on 80-V Half-Bridge GaN FET Module

TI and EPC Partner on 80-V Half-Bridge GaN FET Module

60V Regulator Transistor Reduces Footprint for MCU Powering

60V Regulator Transistor Reduces Footprint for MCU Powering

SiC MOSFETs for Ultra-High Voltage Pulse Generators

SiC MOSFETs for Ultra-High Voltage Pulse Generators


News Mar 02, 2015 by Jeff Shepard
KIT Researching use of High-Power SiC Switches

KIT Researching use of High-Power SiC Switches


News Feb 19, 2015 by Jeff Shepard
Commercialization of High Voltage GaN

Commercialization of High Voltage GaN


News Dec 14, 2014 by Jeff Shepard
25V FET in 4x5 PQFN Power Block Package for DC-DC Applications

25V FET in 4x5 PQFN Power Block Package for DC-DC Applications

High-Voltage IC Building Blocks Simplify SMPS Design

High-Voltage IC Building Blocks Simplify SMPS Design

High Power Density Dual  nHPD2 Packaging Generation

High Power Density Dual nHPD2 Packaging Generation

This article introduces Hitachi's nHPD2 and its benefits in terms of market potential, performance, modularity and ease of transition.


Where is the Journey Headed? The Future of High-Power Semiconductors

Where is the Journey Headed? The Future of High-Power Semiconductors

This article discusses the future of high-power semiconductors in power electronics systems technology of energy savings, dynamics and noise…


The eGaN FET Supply Chain

The eGaN FET Supply Chain

This article discusses the supply chain of silicon MOSFETs and eGaN FET and offers their capital investment and product costs and effect against…


Hua Hong Semi Announces 700V Super-Junction FET Platform

Hua Hong Semi Announces 700V Super-Junction FET Platform


News Nov 03, 2014 by Jeff Shepard
IGBT Modules Rated to 450A for High-Power Industrial Applications

IGBT Modules Rated to 450A for High-Power Industrial Applications

Measuring High-Voltage Power Transistors with Oscilloscopes

Measuring High-Voltage Power Transistors with Oscilloscopes

Toshiba to Develop Transistor Array Series Using 13nm BiCD Process

Toshiba to Develop Transistor Array Series Using 13nm BiCD Process