New Industry Products

0.9mm-square 100V GaN FET for Wireless Charging

October 05, 2015 by Jeff Shepard

Efficient Power Conversion Corporation (EPC) introduces the EPC2037 as the newest member of EPC's family of enhancement-mode gallium nitride power transistors (eGaN FETs). The EPC2037 is a tiny 0.9 mm x 0.9 mm, 100VDS, 1A device with a maximum RDS(on) of 550 milliohms with 5V applied to the gate. This GaN transistor delivers high performance due to its ultra-high switching frequency, low RDS(on), exceptionally low QG and in a very small package. This eGaN FET was designed to be driven directly from a digital logic IC thus eliminating the need for a separate and costly driver IC.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance which does require a driver IC, the EPC2037 is much smaller and has many times superior switching performance. In addition to wireless charging, circuit applications that benefit from this eGaN FET's performance include high frequency dc-dc conversion, LiDAR/pulsed power, and class-D audio amplifiers.

To simplify the evaluation process of this latest high performance eGaN FET, the EPC9051 development board is available to support easy "in circuit" performance evaluation of the EPC2037.