Half-Bridge Evaluation Board Simplifies GaN Transistor Testing
GaN Systems announces its Half-Bridge Evaluation Board which demonstrates the performance of its GaN enhancement mode power semiconductors in real power circuits.
The fully functional GS66508T-EVBHB Evaluation Board is easily configured into any half-bridge-based topology, including synchronous boost and buck conversion modes, as well as pulsed switching to evaluate transistor waveforms.
Accompanied by a Quick Start Instruction Guide and YouTube video links, the Evaluation Board can be installed and used in minutes. Each development kit comes with full documentation, including Bill-of-Materials component part numbers, PCB layout and thermal management, and a gate drive circuit reference design to help system engineers develop their products. Designed to provide electrical engineers with a complete working power stage, the evaluation board consists of two 650 V, 30 A GS66508T GaN FETs, half-bridge gate drivers, a gate drive power supply, and heatsink. The GS66508T high power transistors are based on GaN Systems’ proprietary Island Technology® and belong to its 650 V family of high density devices which achieve extremely efficient power conversion with fast switching speeds of >100 V/nS and ultra-low thermal losses.
About GaN Systems
GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including data center servers, renewable energy systems, automotive, industrial motors and consumer electronics. As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.