The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.
The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster,…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
Infineon has entered into a strategic collaboration with Honda to develop semiconductor solutions for cars. The company…
Infineon has entered into a strategic collaboration with Honda to develop semiconductor solutions for cars. The company has also secured a key…
Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more…
Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more reliable switching and…
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic…
This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic gate drivers with GaN FETs,…
This article reviews GaN FET technologies and topologies and how GaN FET performance can reach the next level.
This article reviews GaN FET technologies and topologies and how GaN FET performance can reach the next level.
The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.
The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.
AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.
AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.
Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply…
Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply controllers in smart meters…
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
A new generation of GaN devices pushes the envelope in terms of efficiency, power density, and response.
A new generation of GaN devices pushes the envelope in terms of efficiency, power density, and response.
Two major companies make acquisitions impacting wide bandgap semiconductors and software-defined vehicle technology for…
Two major companies make acquisitions impacting wide bandgap semiconductors and software-defined vehicle technology for electric vehicles.
One critical barrier to EV adoption is their notoriously long charge times. Onsemi aims to address one piece of the…
One critical barrier to EV adoption is their notoriously long charge times. Onsemi aims to address one piece of the puzzle with new…
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in…
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
The VOMDA1271 optocoupler from Vishay is AEC-Q102 qualified and features an integrated fast turn-off circuit for isolated…
The VOMDA1271 optocoupler from Vishay is AEC-Q102 qualified and features an integrated fast turn-off circuit for isolated FET driving applications…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness their potential.
Alpha & Omega Semiconductor has released high-voltage super junction fast recovery diode MOSFET devices for various…
Alpha & Omega Semiconductor has released high-voltage super junction fast recovery diode MOSFET devices for various applications, including…
SemiQ’s high-performance silicon carbide power modules are rated to 1200 V and offer high efficiency and power density…
SemiQ’s high-performance silicon carbide power modules are rated to 1200 V and offer high efficiency and power density for energy storage, EV…
A look forward to some of the power products, innovations, and technologies that will impact renewable energy generation,…
A look forward to some of the power products, innovations, and technologies that will impact renewable energy generation, distribution, and storage…
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