More than 620 exhibiting companies will showcase their products and innovations at PCIM Europe in Nuremburg. Here's a quick look at some…
More than 620 exhibiting companies will showcase their products and innovations at PCIM Europe in Nuremburg. Here's a quick look at some…
Infineon's second-generation CoolSiC MOSFET devices target high-voltage industrial applications such as EV charging,…
Infineon's second-generation CoolSiC MOSFET devices target high-voltage industrial applications such as EV charging, industrial solar…
The MSC200LHI features 5 kV high isolation voltage required in high-speed gate driver circuits.
The MSC200LHI features 5 kV high isolation voltage required in high-speed gate driver circuits.
Infineon’s state-of-the-art MOSFETs set new industry standards by offering high performance, increased power density,…
Infineon’s state-of-the-art MOSFETs set new industry standards by offering high performance, increased power density, and enhanced efficiency.
How fast an EV charges is at the heart of EV adoption. Here's how the onboard charger plays a pivotal role.
How fast an EV charges is at the heart of EV adoption. Here's how the onboard charger plays a pivotal role.
MOSFET devices should improve figures of merit. A new cell design exploring a three-dimensional charge compensation fits the bill.
MOSFET devices should improve figures of merit. A new cell design exploring a three-dimensional charge compensation fits the bill.
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…
The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from…
The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster,…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
Infineon has entered into a strategic collaboration with Honda to develop semiconductor solutions for cars. The company…
Infineon has entered into a strategic collaboration with Honda to develop semiconductor solutions for cars. The company has also secured a key…
Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more…
Infineon’s family of solid-state isolators features a coreless transformer capable of delivering faster and more reliable switching and…
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic…
This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic gate drivers with GaN FETs,…
This article reviews GaN FET technologies and topologies and how GaN FET performance can reach the next level.
This article reviews GaN FET technologies and topologies and how GaN FET performance can reach the next level.
The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.
The XPH8R316MC and XPH13016MC power MOSFETs exhibit improved on-state resistance compared to previous generations.
AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.
AOS’ DFN 5x6 double-sided cooling package promises to overcome the challenge of cooling power MOSFETs in power electronics.
Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply…
Reference designs from Power Integrations explore the capabilities of the LinkSwitch-XT2SR family of switching supply controllers in smart meters…
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
A new generation of GaN devices pushes the envelope in terms of efficiency, power density, and response.
A new generation of GaN devices pushes the envelope in terms of efficiency, power density, and response.
Two major companies make acquisitions impacting wide bandgap semiconductors and software-defined vehicle technology for…
Two major companies make acquisitions impacting wide bandgap semiconductors and software-defined vehicle technology for electric vehicles.
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