Latest Gallium Nitride Articles

The new units are designed to deliver 98% full-load efficiency for applications drawing between 75 and 400 watts

The new units are designed to deliver 98% full-load efficiency for applications drawing between 75 and 400 watts

Infineon’s Virtual Power Conference, held May 4–6, will feature live expert panels and product demos showcasing the…

Infineon’s Virtual Power Conference, held May 4–6, will feature live expert panels and product demos showcasing the company’s latest energy…

The new power package integrates two 650V GaN power transistors with optimized gate drivers and circuit protection.

The new power package integrates two 650V GaN power transistors with optimized gate drivers and circuit protection.

The new components are said to be the first that are both sulfur-resistant and AEC-Q100 compliant

The new components are said to be the first that are both sulfur-resistant and AEC-Q100 compliant

This article highlights Flex  BMR685’s power-handling capabilities make it well-suited to these high-power RF Power…

This article highlights Flex  BMR685’s power-handling capabilities make it well-suited to these high-power RF Power Amplifier applications, for…

Scientists from the Nagoya Institute of Technology (NITech) have conducted innovative research about the role of…

Scientists from the Nagoya Institute of Technology (NITech) have conducted innovative research about the role of impurities in Gallium Nitride…

Dutch semiconductor manufacturer Nexperia teams up with China’s United Automotive Electronic Systems Co. on a new…

Dutch semiconductor manufacturer Nexperia teams up with China’s United Automotive Electronic Systems Co. on a new program to develop GaN-based…

This year, Key Foundry’s newly developed Gen3 0.18-micron BCD process and its Gen2 0.13 micron embedded flash process…

This year, Key Foundry’s newly developed Gen3 0.18-micron BCD process and its Gen2 0.13 micron embedded flash process will be used for mass…

This article highlights Diodes Incorporated expansion of its family of voltage-level shifters, with the release of…

This article highlights Diodes Incorporated expansion of its family of voltage-level shifters, with the release of the PI4ULS3V304AQ.

Swansea University and Newport Wafer Fab receive government funds to help lead the UK toward net-zero carbon emission…

Swansea University and Newport Wafer Fab receive government funds to help lead the UK toward net-zero carbon emission goals and clean up technology…

The 10 amp EP7010 can regulate through a 0 to 10 amp load step in less than 500 ns with under a 15 mv voltage droop

The 10 amp EP7010 can regulate through a 0 to 10 amp load step in less than 500 ns with under a 15 mv voltage droop

The new family of devices eliminate most power losses in AC/DC power supplies and makes titanium level efficiencies possible

The new family of devices eliminate most power losses in AC/DC power supplies and makes titanium level efficiencies possible

This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet…

This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…

This linear regulator also ensures robust circuit protection, such as overcurrent protection, thermal shutdown and the…

This linear regulator also ensures robust circuit protection, such as overcurrent protection, thermal shutdown and the power good signal, which…

This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and…

This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential…

The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage

The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage

This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.

This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.

Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.

Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications