This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.
This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.
Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of…
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.
This article is the first in a series of articles discussing three topics that can help power systems designers achieve…
This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The new surface-mounted multilayer ceramic chip capacitors are aimed at ameliorating the harmful effects of “tin whiskers”
The new surface-mounted multilayer ceramic chip capacitors are aimed at ameliorating the harmful effects of “tin whiskers”
The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance
The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance
Japanese semiconductor giant Renesas is acquiring U.K.-based integrated circuit provider Dialog Semiconductor for nearly…
Japanese semiconductor giant Renesas is acquiring U.K.-based integrated circuit provider Dialog Semiconductor for nearly $6 billion.
The TCKE712BNL protects power lines with an overvoltage protection function that can be adjusted to user requirements…
The TCKE712BNL protects power lines with an overvoltage protection function that can be adjusted to user requirements with external resistors.
Maxim Integrated, an industry leader with a broad portfolio of high-performance semiconductors has released the MAX20361,…
Maxim Integrated, an industry leader with a broad portfolio of high-performance semiconductors has released the MAX20361, a single/multi-cell solar…
A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator…
A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator capable of stable operation in…
This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that…
This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that is specialized in server…
The new device enables the fastest wireless charging for smartphones, notebooks and laptops.
The new device enables the fastest wireless charging for smartphones, notebooks and laptops.
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection…
Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection strategies commonly employed in ICs.
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility…
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into…
Facebook
Google
GitHub
Linkedin