Latest Gallium Nitride Articles

This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet…

This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…

This linear regulator also ensures robust circuit protection, such as overcurrent protection, thermal shutdown and the…

This linear regulator also ensures robust circuit protection, such as overcurrent protection, thermal shutdown and the power good signal, which…

This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and…

This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential…

The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage

The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage

This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.

This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.

Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.

Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications

This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um…

This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…

The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.

The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.

This article discusses the challenges that thermal management raises due to increased power density, especially with…

This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).

This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.

This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.

The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.

The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source…

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.

The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.

The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.

Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.

Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of…

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.

The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.

The new eGaN FET units are aimed at time-of-flight (ToF) lidar applications.

This article is the first in a series of articles discussing three topics that can help power systems designers achieve…

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…