This article examines the use of power semiconductors in a low voltage drive with the general architecture.
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
Alpha and Omega Semiconductor’s (AOS) smart protection switch is aimed at Type-C Power Delivery applications.
The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for…
The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for designing and implementing…
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the…
This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the driver to operate from a…
Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.
Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.
This improved power rating allows the RNCF0201 to be used for applications that may have previously required an 0402 or…
This improved power rating allows the RNCF0201 to be used for applications that may have previously required an 0402 or larger size chip resistor.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
The Dual Output 3+1 Phase Digital VCOT controller provides power for 5G subsystems including the CU, DU, and RU platforms.
Cree and STMicroelectronics are expanding their supply agreement to manage higher production volumes.
Cree and STMicroelectronics are expanding their supply agreement to manage higher production volumes.
SPTS technologies presents advanced wafer processing solutions for backside metallization in power devices, which is…
SPTS technologies presents advanced wafer processing solutions for backside metallization in power devices, which is critical for improving overall…
The new series of devices, aimed at automotive applications, features overvoltage, undervoltage, and analog monitoring in…
The new series of devices, aimed at automotive applications, features overvoltage, undervoltage, and analog monitoring in a single IC.
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
The new Power management ICs (PMICs) are aimed at powering automotive AI systems on chips (SoC).
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
AHKAN hopes this technology will improve power handling, heat management, durability, and more.
Texas Instruments acquires Micron’s 300-mm wafer fabrication facility for $1.5 billion, a hefty investment to boost its…
Texas Instruments acquires Micron’s 300-mm wafer fabrication facility for $1.5 billion, a hefty investment to boost its production capacity.
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than…
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad…
ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.
ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.
The new devices compliment the company’s present offerings of dual and quad channel Type-C power delivery ICs.
The new devices compliment the company’s present offerings of dual and quad channel Type-C power delivery ICs.
The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.
The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.
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