Latest Reliability & Security News

STMicro and Advantest Work to Improve Semiconductor Testing

STMicro and Advantest create an advanced test cell to help improve efficiency of semiconductor testing and overall operations.

ROHM, Analog Devices, and Maxim Integrated to Showcase New Devices at Virtual Electronica

Electronica, one of the World’s leading trade fairs for electronics, will take place next week. Here’s what several power electronics companies…

GaN Systems Details the Reliability of Gallium Nitride Transistors

GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.

Telechips Chooses Dialog Semiconductor as its Preferred Power Management Partner

Dialog Semiconductor becomes Telechips' chosen partner for the further development of power management solutions.

The Power Technology Behind NASA’s Mars Rover Perseverance

The Rover’s power sources, essentially its lifeline, will heavily rely on Infineon and KULR Technology.

EPC and VPT Partner to Provide Power Conversion Solutions for High-Reliability Environments

Efficient Power Conversion (EPC) and VPT establish EPC Space, to design and manufacture radiation-hardened GaN-on-silicon transistors and ICs.

Software Extends Security, Connectivity, Motor Control and Machine Learning

Detecting Cyber Attacks on Voltage, Temperature and Timing Sensors

USA Rare Earth Acquires NdFeB Permanent Magnet Manufacturing Equipment

ABB Electrification to Offer Free Digital Solutions Throughout 2020

Plug-and-Play Industry 4.0 Vibration Sensing Plus Eval Board

Using Domestic Water Heaters to Balance Electricity Demand

Sandia Initiatives to Protect US Energy Grid and Nuclear Weapons Systems

Power Reliability Continues to be a Hindrance to Business Growth

Infineon Accelerates Research on Post-Quantum Cryptography

Remote Monitoring Solution for Industrial Nickel Batteries

First Grade 0 Digital Isolator for HEV/EV Systems that Exceed 125°C

JEDEC Publishes Guideline for Switching Reliability Evaluation Procedures for GaN Devices