EEPower

Latest Wide Bandgap New Products

Categories

Monolithic GaN Half-Bridge enables Single-Stage Conversion from 48V to 1V

Monolithic GaN Half-Bridge enables Single-Stage Conversion from 48V to 1V

25-mOhm / 1700-V SiC Transistors

25-mOhm / 1700-V SiC Transistors

Wide-Input, 20 Amp GaN-Based Buck Converter Demo Board

Wide-Input, 20 Amp GaN-Based Buck Converter Demo Board

SiC Power MOSFET SPICE Models from Cree

SiC Power MOSFET SPICE Models from Cree

20A All-SiC 1.2kV Six-Pack for 5-15kW Three-Phase Designs

20A All-SiC 1.2kV Six-Pack for 5-15kW Three-Phase Designs

New Family of 50V GaN HEMT Die

New Family of 50V GaN HEMT Die

1.7kV All-SiC Half-Bridge Power Module

1.7kV All-SiC Half-Bridge Power Module

300V GaN Power Transistors for High-Frequency Applications

300V GaN Power Transistors for High-Frequency Applications

Monolithic GaN Half Bridge Enables 90% Efficient 12V-to-1.2V 25A POL

Monolithic GaN Half Bridge Enables 90% Efficient 12V-to-1.2V 25A POL

Toshiba to Develop Transistor Array Series Using 13nm BiCD Process

Toshiba to Develop Transistor Array Series Using 13nm BiCD Process

GaN-Ready Transformers and Inductors

GaN-Ready Transformers and Inductors

Driver Integrated GaN Transistors Announced by Sanken

Driver Integrated GaN Transistors Announced by Sanken

10A and 20A Silicon Carbide Schottky Diodes

10A and 20A Silicon Carbide Schottky Diodes

A4WP-Compliant 35W Wireless Power Transfer with GaN

A4WP-Compliant 35W Wireless Power Transfer with GaN

GaN Widens the Performance Gap with the Silicon MOSFETs

GaN Widens the Performance Gap with the Silicon MOSFETs

Wireless Power Demo Boards Operate at 6.78 MHz with GaN FETs

Wireless Power Demo Boards Operate at 6.78 MHz with GaN FETs

Fifth-Generation 1200V SiC Schottky Diodes

Fifth-Generation 1200V SiC Schottky Diodes

Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

SiC Power Modules offered with Choice or ROHM of Cree FETs

SiC Power Modules offered with Choice or ROHM of Cree FETs

650V and 100V GaN Transistors Announced

650V and 100V GaN Transistors Announced