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120A / 650V GaN Power Transistor Can Double Power Conversion Density

120A / 650V GaN Power Transistor Can Double Power Conversion Density

new products Feb 28, 2018 by Paul Shepard
1200V SiC MOSFETs and SiC SBDs for Industrial and Automotive Designs

1200V SiC MOSFETs and SiC SBDs for Industrial and Automotive Designs

new products Feb 27, 2018 by Paul Shepard
New Ferrite for High-Frequency GaN and SiC Power Converters

New Ferrite for High-Frequency GaN and SiC Power Converters

new products Feb 22, 2018 by Paul Shepard
1200V SiC Schottkys Designed to Endure High-Pollution Environments

1200V SiC Schottkys Designed to Endure High-Pollution Environments

new products Feb 21, 2018 by Paul Shepard
GaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz

GaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz

new products Feb 08, 2018 by Paul Shepard
Renesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die

Renesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die

new products Feb 07, 2018 by Paul Shepard
1200V GaN-based Power Modules from VisIC and TSMC

1200V GaN-based Power Modules from VisIC and TSMC

new products Feb 06, 2018 by Paul Shepard
Over 1400V Breakdown on new GaN-on-Si Epiwafer Product

Over 1400V Breakdown on new GaN-on-Si Epiwafer Product

new products Feb 02, 2018 by Paul Shepard
GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

new products Jan 23, 2018 by Paul Shepard
1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

new products Jan 16, 2018 by Paul Shepard
Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Littelfuse, Inc. introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family

new products Jan 16, 2018 by Littelfuse
GaN enables Ultra Wide-Band Linearized Doherty Amplifier

GaN enables Ultra Wide-Band Linearized Doherty Amplifier

new products Jan 11, 2018 by Paul Shepard
Next Generation Silicon Carbide Power Device with 3DSiC Technology

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Ascatron provides next generation Silicon Carbide (SiC) power semiconductors using its proprietary 3DSiC® technology with a quality and…

new products Jan 11, 2018 by Ascatron
Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

new products Dec 22, 2017 by Paul Shepard
40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

new products Dec 19, 2017 by Paul Shepard
Give the Gift of GaN Class-D Audio

Give the Gift of GaN Class-D Audio

new products Dec 08, 2017 by Paul Shepard
Transistor Arrays Handle up to 50V / 0.5A with 40% Lower Power

Transistor Arrays Handle up to 50V / 0.5A with 40% Lower Power

new products Nov 21, 2017 by Paul Shepard
Second-Generation 650V SiC Schottky Barrier Diodes in DPAK

Second-Generation 650V SiC Schottky Barrier Diodes in DPAK

new products Oct 17, 2017 by Paul Shepard
GaN FET Driver Brings Fastest Switching Speeds to Class-D Audio

GaN FET Driver Brings Fastest Switching Speeds to Class-D Audio

new products Oct 17, 2017 by Paul Shepard
SiC MOSFET Provides Ultra-Fast Switching in Power Electronics

SiC MOSFET Provides Ultra-Fast Switching in Power Electronics

Littelfuse, Inc. introduces its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power semiconductor line

new products Oct 03, 2017 by Littelfuse