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Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Next Generation GaN HEMTs Deliver Unmatched Efficiency

Next Generation GaN HEMTs Deliver Unmatched Efficiency

Wolfspeed introduced a new series of 28V GaN HEMT RF power devices capable of higher frequency operation to 8GHz with increased efficiency and…


new products Sep 12, 2017 by Wolfspeed
1200-Volt SiC Schottkys for High-Temperature Designs

1200-Volt SiC Schottkys for High-Temperature Designs

250W 50V GaN HEMT with High Efficiency to 3.0GHz

250W 50V GaN HEMT with High Efficiency to 3.0GHz

50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

Wolfspeed has extended its family of 50V unmatched GaN HEMT RF power devices.


new products Aug 24, 2017 by Wolfspeed
200 V Gallium Nitride Power Transistor

200 V Gallium Nitride Power Transistor

Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS EPC2046 GaN…


new products Aug 23, 2017 by EPC
DC-DC Converters for Driving Next-Gen SiC MOSFETs

DC-DC Converters for Driving Next-Gen SiC MOSFETs

80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

Wolfspeed, A Cree Company announces that it has advanced the development of high efficiency data center power supplies through the implementation…


new products Aug 11, 2017 by Wolfspeed
Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

RF MLCCs Rated to +200 C Target SiC and GaN Designs

RF MLCCs Rated to +200 C Target SiC and GaN Designs

GaN Power Amplifiers feature Low Noise High Gain

GaN Power Amplifiers feature Low Noise High Gain

Power Transistor Modeler Reduces Time to Market

Power Transistor Modeler Reduces Time to Market

Ultra-Fast Switching with 1200V SiC Schottky

Ultra-Fast Switching with 1200V SiC Schottky

50V GaN-on-SiC Transistors Boost Efficiency and Bandwidth

50V GaN-on-SiC Transistors Boost Efficiency and Bandwidth

50V DC-DC Bricks Enable GaN Wireless Power Amplifiers

50V DC-DC Bricks Enable GaN Wireless Power Amplifiers

Transistor Delivers 750W CW for 915MHz Applications

Transistor Delivers 750W CW for 915MHz Applications

50 Volt DC-DC Bricks Enable GaN Wireless Power Amplifiers

50 Volt DC-DC Bricks Enable GaN Wireless Power Amplifiers

Artesyn Embedded Technologies today announced three new series of 50-volt dc-dc converter modules


1200V Silicon-Carbide Diodes Deliver Superior Efficiency

1200V Silicon-Carbide Diodes Deliver Superior Efficiency

This article introduces STMicroelectronics' full range of 2A-40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes


First Automotive-Qualified GaN FETs

First Automotive-Qualified GaN FETs

Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first…


new products Jun 13, 2017 by Transphorm
Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs

Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs