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Richardson RFPD Introduces New Family of 650 V GaN E-HEMTs from GaN Systems

Richardson RFPD Introduces New Family of 650 V GaN E-HEMTs from GaN Systems

This article highlights Richardson RFPD GS-065-0xx-1-L devices which is the new Family of 650 V GaN E-HEMTs ideal for low power applications.


Flying Cell Towers Enabled by 29.1% Efficient Single-Junction GaAs Solar Cells

Flying Cell Towers Enabled by 29.1% Efficient Single-Junction GaAs Solar Cells

GaN Systems CEO to Deliver PCIM Keynote on GaN and New Hardware Innovations Driving Industry 40

GaN Systems CEO to Deliver PCIM Keynote on GaN and New Hardware Innovations Driving Industry 40

OTTAWA, Ontario, Canada, April 24, 2019 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced that its CEO


new products Apr 24, 2019 by GaN Systems
Hybrid SiC Power Modules Enable High-Capacity UPS

Hybrid SiC Power Modules Enable High-Capacity UPS

6.6 kW SiC-based Bi-Directional EV On-Board Charger Reference Design

6.6 kW SiC-based Bi-Directional EV On-Board Charger Reference Design

Radiation-Tolerant PWM Controller and GaN FET Driver for DC-DCs in Small Satellites

Radiation-Tolerant PWM Controller and GaN FET Driver for DC-DCs in Small Satellites

Small Footprint, Hermetic 43A, 700V GaN FETs with Internal CuW Heat Sink

Small Footprint, Hermetic 43A, 700V GaN FETs with Internal CuW Heat Sink

1200V, 30A/60A Si Rectifiers Cut Efficiency Gap with SiC Devices

1200V, 30A/60A Si Rectifiers Cut Efficiency Gap with SiC Devices

Expanded 100V GaN FET Family for 48Vin DC-DCs

Expanded 100V GaN FET Family for 48Vin DC-DCs

SiC Driver Eval Board for Existing or New PCB Designs

SiC Driver Eval Board for Existing or New PCB Designs

SCALE-iDriver SiC-MOSFET Gate Driver

SCALE-iDriver SiC-MOSFET Gate Driver

This article highlights Power Integrations SIC1182K SCALE-iDriver™single-channel SiC MOSFET gate driver that delivers the highest peak output…


1200V SiC Schottkys for Smaller More Efficient Power Converters

1200V SiC Schottkys for Smaller More Efficient Power Converters

600V 150mΩ GaN Power Stage with Integrated Driver

600V 150mΩ GaN Power Stage with Integrated Driver

650V AEC-Q101 SiC Schottky Diodes Rated to 40A

650V AEC-Q101 SiC Schottky Diodes Rated to 40A

Alpha and Omega Semiconductor Launches New 650V GaN Product Family

Alpha and Omega Semiconductor Launches New 650V GaN Product Family

This article discuss the Alpha and Omega Semiconductor AONV070V65G1 Gallium Nitride (GaN) 650V transistor, a product in the new αGAN™ Technology…


ROHM Claims Industry’s Largest Lineup of Automotive-Grade SiC MOSFETs

ROHM Claims Industry’s Largest Lineup of Automotive-Grade SiC MOSFETs

ON Semi adds Industrial & Automotive Qualified SiC MOSFETs

ON Semi adds Industrial & Automotive Qualified SiC MOSFETs

New Design Tools and Resources from GaN Systems and Global Partners Shorten Design Times and Increase System Performance

New Design Tools and Resources from GaN Systems and Global Partners Shorten Design Times and Increase System Performance

Anaheim, Calif., Applied Power Electronics Conference & Exposition (APEC) March 19, 2019 – GaN Systems, the global leader in GaN (gallium…


new products Mar 19, 2019 by GaN Systems
UnitedSiC announces SiC JFET family for low power ACDC Flyback converters

UnitedSiC announces SiC JFET family for low power ACDC Flyback converters

March 19, 2019, Applied Power Electronics Conference (APEC) Anaheim CA, and Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide…


ROHM Now Offers the Industrys Largest Lineup of AutomotiveGrade SiC MOSFETs

ROHM Now Offers the Industrys Largest Lineup of AutomotiveGrade SiC MOSFETs

ROHM has recently announced the addition of 10 new automotive-grade SiC MOSFETs.


new products Mar 19, 2019 by ROHM