This article highlights Power Integrations SIC1182K SCALE-iDriver™single-channel SiC MOSFET gate driver that delivers…
This article highlights Power Integrations SIC1182K SCALE-iDriver™single-channel SiC MOSFET gate driver that delivers the highest peak output…
This article discuss the Alpha and Omega Semiconductor AONV070V65G1 Gallium Nitride (GaN) 650V transistor, a product in…
This article discuss the Alpha and Omega Semiconductor AONV070V65G1 Gallium Nitride (GaN) 650V transistor, a product in the new αGAN™ Technology…
Anaheim, Calif., Applied Power Electronics Conference & Exposition (APEC) March 19, 2019 – GaN Systems, the global…
Anaheim, Calif., Applied Power Electronics Conference & Exposition (APEC) March 19, 2019 – GaN Systems, the global leader in GaN (gallium…
March 19, 2019, Applied Power Electronics Conference (APEC) Anaheim CA, and Princeton, New Jersey: UnitedSiC, a…
March 19, 2019, Applied Power Electronics Conference (APEC) Anaheim CA, and Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide…
ROHM has recently announced the addition of 10 new automotive-grade SiC MOSFETs.
ROHM has recently announced the addition of 10 new automotive-grade SiC MOSFETs.
GaN Systems announces a strategic partnership with Aveox to significantly reduce the size and weight of their 3-phase AC…
GaN Systems announces a strategic partnership with Aveox to significantly reduce the size and weight of their 3-phase AC power converters with APFC.
Texas Instruments recently introduced several new isolated gate drivers that provide unparalleled levels of monitoring…
Texas Instruments recently introduced several new isolated gate drivers that provide unparalleled levels of monitoring and protection for high-voltage
Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a…
Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for