EEPower

Latest Silicon Carbide New Products

Categories

Fifth-Generation 1200V SiC Schottky Diodes

Fifth-Generation 1200V SiC Schottky Diodes

10W USB Charger IC with Integrated Fuel Gauge Targets China

10W USB Charger IC with Integrated Fuel Gauge Targets China

Low-Power HART CMOS Modem IC for Industrial Communications

Low-Power HART CMOS Modem IC for Industrial Communications

Flexible Single-Stage Digital LED Driver IC Platform

Flexible Single-Stage Digital LED Driver IC Platform

Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

SiC Power Modules offered with Choice or ROHM of Cree FETs

SiC Power Modules offered with Choice or ROHM of Cree FETs

New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

Wafer-Level Testing for  High-Current and High-Voltage GaN and SiC

Wafer-Level Testing for High-Current and High-Voltage GaN and SiC

ChiP-based DCM Converter Modules Deliver up to 1244 W/in3

ChiP-based DCM Converter Modules Deliver up to 1244 W/in3

Backup Power Controller and Supercap Charger/Monitor IC

Backup Power Controller and Supercap Charger/Monitor IC

All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

Mitsubishi  showing Hybrid SiC Power Modules at PCIM

Mitsubishi showing Hybrid SiC Power Modules at PCIM

1.2KV SiC MOSFET in a MiniBLOC SOT-227

1.2KV SiC MOSFET in a MiniBLOC SOT-227

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

Discrete 650V SiC Rectifiers rated for 20A and 50A

Discrete 650V SiC Rectifiers rated for 20A and 50A

SiC Wafer Grading Structure proposed by Dow Corning

SiC Wafer Grading Structure proposed by Dow Corning

RCD Claims the Widest Range of Thin-Film Chip Resistors

RCD Claims the Widest Range of Thin-Film Chip Resistors

Dual Output Differential Speed and Direction Sensor IC

Dual Output Differential Speed and Direction Sensor IC

ChiP-based BCMs provide Power Density of 2,750 W/in3 with PMBus

ChiP-based BCMs provide Power Density of 2,750 W/in3 with PMBus

Ultra-High-Precision Chip Resistors Tested per EEE-INST-002 and MIL-PRF-55342

Ultra-High-Precision Chip Resistors Tested per EEE-INST-002 and MIL-PRF-55342