IXYS Corporation announced today the availability of the IXFN50N120SiC, a 1200V SiC MOSFET in a MiniBLOC SOT-227 package. IXFN50N120SiC offers a 40 milliohm N-channel normally off SiC MOSFET with 1200V blocking voltage in a MiniBLOC (SOT-227) package featuring a 3kV isolation to heat sink and a low thermal impedance. This "cool" solution is based on heat spreading before isolation and AlN substrate as isolator. This concept allows the optimized cooling of SiC dies exhibiting high power densities in operation.
“With this latest addition to our MOSFET portfolio, IXYS is addressing market demands for solutions specifically for high frequency applications. The benefit of added power density obtained by utilizing SiC devices at the same time satisfies the trend to reduce the footprint of power system solutions,†states Dr. Elmar Wisotzki, General Manager of IXYS GmbH. “The key to fully harvest the benefits of SiC power devices is the right package, and here the new combination of a SiC Mosfet with the outstanding thermal performance of the MiniBLOC package will enable our customer to follow their target for solutions with less cooling, less system weight and more compact size.â€
Further features are a very-low gate charge for easy drive, a fast body diode, low input and output capacities and a positive temperature coefficient enabling paralleling for higher-power applications. Typical applications, among others, are high efficient dc-dc converters, solar inverters, UPS systems and rapid-charger solutions.
