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Arctic Sand Technologies Acquired

Arctic Sand Technologies Acquired

Peregrine Semiconductor Corp., a Murata company and the founder of RF SOI (silicon on insulator), today announces the acquisition of Arctic Sand…


80% Smaller Automotive Power MOSFET Package

80% Smaller Automotive Power MOSFET Package

High Performance 1.7kV / 960A Press-Pack IGBT

High Performance 1.7kV / 960A Press-Pack IGBT

GaN FETs Extend Cost/Performance Benefits over Silicon

GaN FETs Extend Cost/Performance Benefits over Silicon

Motor Control SoC with Integrated MCU and FET Pre-driver

Motor Control SoC with Integrated MCU and FET Pre-driver

New-Generation Transistor Arrays with DMOS FET Outputs

New-Generation Transistor Arrays with DMOS FET Outputs

System Benefits of Using G1 Series Intelligent Power Modules (IPM)

System Benefits of Using G1 Series Intelligent Power Modules (IPM)

This article discusses the system benefits and advantages of using Mitsubishi Electric's G1 Series Intelligent Power Modules for inverter…


Single-chip 2.4GHz Transceiver for Wireless ZigBee and IoT

Single-chip 2.4GHz Transceiver for Wireless ZigBee and IoT

Dual-Mode IC Supports Bluetooth Classic and LE 4.2

Dual-Mode IC Supports Bluetooth Classic and LE 4.2

Misubishi adds 600V SiC Schottky-Barrier Diodes

Misubishi adds 600V SiC Schottky-Barrier Diodes

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia.  


new products Mar 03, 2017 by EPC
600V MOSFET with Integrated Fast Body Diode

600V MOSFET with Integrated Fast Body Diode

SiC Gate Driver Optimized for 62mm Modules

SiC Gate Driver Optimized for 62mm Modules

Enhanced Radiation Hardened MOSFET Family for Space

Enhanced Radiation Hardened MOSFET Family for Space

IR HiRel, an Infineon Technologies AG company, has launched its first radiation hardened MOSFETs based on the proprietary N-channel R9 technology…


Integrated MOSFET Voltage Regulator for PoL Designs

Integrated MOSFET Voltage Regulator for PoL Designs

Third-Generation MOSFET Platform Expanded to 1200V

Third-Generation MOSFET Platform Expanded to 1200V

Wolfspeed expands its innovative C3M™ platform by introducing a 1200V, 75mΩ MOSFET in low-inductance discrete packaging


new products Feb 23, 2017 by Wolfspeed
1200V 75mOhm SiC FET in Low-Inductance Package

1200V 75mOhm SiC FET in Low-Inductance Package

MOSFET Relays for 60V and 350V AC or DC Switching

MOSFET Relays for 60V and 350V AC or DC Switching

Integrated Half-Bridge GaN Power IC

Integrated Half-Bridge GaN Power IC

160W and 375W DC-DCs in 0.29” High ChiP Packaging

160W and 375W DC-DCs in 0.29” High ChiP Packaging